Why There Is No IGBT Traction Rectifiers?

2014 ◽  
Author(s):  
Vitaly Gelman
Keyword(s):  
High Power ◽  
Power Converters ◽  
Reactive Power ◽  
Bipolar Transistors ◽  
Insulated Gate Bipolar Transistors ◽  
Pwm Rectifiers ◽  
Traction Power ◽  
Power Substations

The Insulated Gate Bipolar Transistors (IGBT) are widely used in high power converters. Definite advantages of IGBT rectifiers (also called PWM rectifiers) are: zero reactive power, low harmonics, and inherent power recuperation capability. However stationary traction rectifiers are built with either thyristors or diodes, not with IGBTs. The paper compares IGBT and thyristor rectifiers and analyzes the factors precluding the use of IGBT rectifiers at traction power substations.

Innovative Laser Process for Gel Removal

2016 ◽  
Author(s):  
Gregory Burt Anderson ◽  
Lance Fordham
Keyword(s):  
High Power ◽  
Thick Layer ◽  
Bipolar Transistors ◽  
Insulated Gate Bipolar Transistors ◽  
Chemical Methods ◽  
Laser Process ◽  
Wire Bonds ◽  
Power Modules ◽  
Significant Damage ◽  
Water Rinse

Abstract High-power modules incorporating insulated gate bipolar transistors (IGBT) include a thick layer of dielectric insulating gel to prevent arcing. Chemical methods currently used to remove the gel are slow, taking up to 24 hours, while generating as much as a half-gallon of waste. High-pressure wet jets have also been used, but they cause significant damage to wire bonds. In this paper, we present a fast and efficient process for removing insulating gel from high-power modules. The method uses a CO2 laser to selectively open windows in the gel that are then filled with a few drops of solvent followed by a DI water rinse. The entire process takes less than an hour to prepare samples for inspection and analysis, while generating just 200ml of waste.

scholarly journals Electro-Thermo-Mechanical Analysis of High-Power Press-Pack Insulated Gate Bipolar Transistors under Various Mechanical Clamping Conditions

2014 ◽  
Vol 3 (3) ◽  
pp. 192-197 ◽  
Author(s):  
Adrian Augustin Hasmasan ◽  
Cristian Busca ◽  
Remus Teodorescu ◽  
Lars Helle ◽  
Frede Blaabjerg
Keyword(s):  
High Power ◽  
Mechanical Analysis ◽  
Bipolar Transistors ◽  
Insulated Gate Bipolar Transistors

High Power Insulated Gate Bipolar Transistors (IGBTs)

1988 ◽  
Author(s):  
H. Ohashi ◽  
A. Nakagawa ◽  
M. Hideshima
Keyword(s):  
High Power ◽  
Bipolar Transistors ◽  
Insulated Gate Bipolar Transistors
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