Liquid cooling module incorporating a metal foam and fin hybrid structure for high power insulated gate bipolar transistors (IGBTs)

2020 ◽  
Vol 173 ◽  
pp. 115230 ◽  
Author(s):  
Jooyoung Lee ◽  
Seokkan Ki ◽  
Donghyun Seo ◽  
Jaechoon Kim ◽  
Youngsuk Nam
Author(s):  
Vitaly Gelman

The Insulated Gate Bipolar Transistors (IGBT) are widely used in high power converters. Definite advantages of IGBT rectifiers (also called PWM rectifiers) are: zero reactive power, low harmonics, and inherent power recuperation capability. However stationary traction rectifiers are built with either thyristors or diodes, not with IGBTs. The paper compares IGBT and thyristor rectifiers and analyzes the factors precluding the use of IGBT rectifiers at traction power substations.


1989 ◽  
Vol 167 ◽  
Author(s):  
K. Kimbara ◽  
A. Dohya ◽  
T. Watari

AbstractThis paper introduces the Polylmide-Ceramic substrate for NEC SX Supercomputers. In case of high performance system such as supercomputers and top end machines in general purpose computer, sophisticated packaging technologies are essential to achieve fastest operations as well as to use highestspeed, highly integrated LSIs.Wiring substrate which mounts and interconnects LSIs is the key to back up LSI's higher logical-operations.The high speed interconnection wirings and high density LSI mounting are requested for substrate.The Polyimide-Ceramic substrate had been developed to meet these demands and have many features of high density thin film wiring, high power supply, high thermal conductivity and huge number of I/Os, in addition to high speed wiring.25μm wide 75μm center-to-center spacing, two signal layers, 6ns/m signal transmissions, 2.5W/cm2 high power density, 2177 I/Os on a 100mm square substrate have been achieved by using this super substrate technology.The packaging hierarchy, the first level packaging of TAB LSI, the second level of multi-chip packaging by using Polyimide-Ceramic substrate and liquid cooling module, and the third level of board assemblies are introduced.


Author(s):  
Gregory Burt Anderson ◽  
Lance Fordham

Abstract High-power modules incorporating insulated gate bipolar transistors (IGBT) include a thick layer of dielectric insulating gel to prevent arcing. Chemical methods currently used to remove the gel are slow, taking up to 24 hours, while generating as much as a half-gallon of waste. High-pressure wet jets have also been used, but they cause significant damage to wire bonds. In this paper, we present a fast and efficient process for removing insulating gel from high-power modules. The method uses a CO2 laser to selectively open windows in the gel that are then filled with a few drops of solvent followed by a DI water rinse. The entire process takes less than an hour to prepare samples for inspection and analysis, while generating just 200ml of waste.


2014 ◽  
Vol 3 (3) ◽  
pp. 192-197 ◽  
Author(s):  
Adrian Augustin Hasmasan ◽  
Cristian Busca ◽  
Remus Teodorescu ◽  
Lars Helle ◽  
Frede Blaabjerg

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