Evaluation of high-voltage, high-power 4H-SiC insulated-gate bipolar transistors

Author(s):  
Miguel Hinojosa ◽  
Aderinto Ogunniyi ◽  
Heather O'Brien ◽  
Stephen B. Bayne ◽  
Charles Scozzie
2001 ◽  
Author(s):  
Giho Cha ◽  
Youngchul Kim ◽  
Hyungwoo Jang ◽  
Hyunsoon Kang ◽  
Changsub Song

Author(s):  
Vitaly Gelman

The Insulated Gate Bipolar Transistors (IGBT) are widely used in high power converters. Definite advantages of IGBT rectifiers (also called PWM rectifiers) are: zero reactive power, low harmonics, and inherent power recuperation capability. However stationary traction rectifiers are built with either thyristors or diodes, not with IGBTs. The paper compares IGBT and thyristor rectifiers and analyzes the factors precluding the use of IGBT rectifiers at traction power substations.


2001 ◽  
Vol 35 (2) ◽  
pp. 238-241
Author(s):  
M. Yu. Volokobinskii ◽  
I. N. Komarov ◽  
T. V. Matyukhina ◽  
V. I. Reshetnikov ◽  
A. A. Rush ◽  
...  

2015 ◽  
Vol 118 (8) ◽  
pp. 085702 ◽  
Author(s):  
Tetsuya Miyazawa ◽  
Koji Nakayama ◽  
Atsushi Tanaka ◽  
Katsunori Asano ◽  
Shi-yang Ji ◽  
...  

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