Transient Surface Temperature Measurement With Micro Sensors for Nanosecond Pulsed Laser Micromachining of Nickel

2006 ◽  
Author(s):  
Hongseok Choi ◽  
Xiaochun Li
Keyword(s):  
Laser Energy ◽  
Numerical Models ◽  
Pulsed Laser ◽  
Laser Micromachining ◽  
Measured Data ◽  
Time Resolved ◽  
Nanosecond Pulsed Laser ◽  
Thin Film Thermocouples ◽  
Transient Thermal ◽  
Thermal Phenomena

In order to investigate and understand the complicated transient thermal phenomena in laser micro processing, it is essential to accurately measure time-resolved temperatures of the workpiece. Micro thin film thermocouples with a micrometer spatial and nanosecond temporal resolution were fabricated on electroplated nickel workpieces to measure transient surface temperatures in nanosecond pulsed laser micromachining by ablation. Transient temperatures were successfully measured, and the effect of laser energy fluences on the peak temperatures was experimentally investigated. This study demonstrates that the micro TFTCs can be useful in measuring the transient temperatures on the workpiece during laser micromachining, and the measured data can be utilized to validate and improve existing analytical and numerical models.

Transient Temperature Measurement in Nanosecond Pulsed Laser Micro Drilling by Using Micro Thin Film Thermocouples

2005 ◽  
Author(s):  
Hongseok Choi ◽  
Xiaochun Li
Keyword(s):  
Thin Film ◽  
Numerical Models ◽  
Pulsed Laser ◽  
Transient Temperature ◽  
Fundamental Study ◽  
Nanosecond Pulsed Laser ◽  
Micro Drilling ◽  
Thin Film Thermocouples ◽  
Transient Thermal ◽  
Thermal Phenomena

It is of fundamental interest to investigate the complicated and transient thermal phenomena near the nanosecond pulsed laser-material interaction region. While numerous analytic and numerical models have been developed, little experimental results are available for a solid understanding of transient thermal phenomena in nanosecond pulsed laser micro drilling. In this paper, micro thin film thermocouples were fabricated on electroplated nickel substrates to study the transient temperature variations during laser micro drilling. Transient temperatures were successfully measured with superior temporal and spatial resolutions for the fundamental study of the nanosecond pulsed laser micro drilling. The in-situ measured data can be used to improve existing analytical and numerical models.

Early Dynamics of a Laser-induced Underwater Shock Wave

2021 ◽  
Author(s):  
Guihua Lai ◽  
Siyuan Geng ◽  
Hanwen Zheng ◽  
Zhifeng Yao ◽  
Qiang Zhong ◽  
...  
Keyword(s):  
Shock Wave ◽  
Numerical Method ◽  
Cavitation Bubble ◽  
Laser Energy ◽  
Optical Breakdown ◽  
Pulsed Laser ◽  
Underwater Shock Wave ◽  
Time Resolved ◽  
High Attenuation ◽  
Nanosecond Pulsed Laser

Abstract The objective of this paper is to observe and investigate the early evolution of the shock wave, induced by a nanosecond pulsed laser in still water. A numerical method is performed to calculate the propagation of the shock wave within 1µs, after optical breakdown, based on the Gilmore model and the Kirkwood-Bethe hypothesis. The input parameters of the numerical method include the laser pulse duration, the size of the plasma and the maximally extended cavitation bubble, which are measured utilizing a high time-resolved shadowgraph system. The calculation results are verified by shock wave observation experiments at the cavitation bubble expansion stage. The relative errors of the radiuses and the velocity of the shock wave front, reach the maximum value of 45% at 5 ns after breakdown and decrease to less than 20% within 20 ns. The high attenuation characteristics of the shock wave after the optical breakdown, are predicted by the numerical method. The quick time and space evolution of the shock wave are carefully analyzed. The normalized shock wave width is found to be independent of the laser energy and duration, and the energy partitions ratio is around 2.0 using the nanosecond pulsed laser.

Time-Resolved X-Ray Absorption of An Amorphous Si Foil During Pulsed Laser Irradiation

1985 ◽  
Vol 51 ◽  
Author(s):  
Kouichi Murakami ◽  
Hans C. Gerritsen ◽  
Hedser Van Brug ◽  
Fred Bijkerk ◽  
Frans W. Saris ◽  
...  
Keyword(s):  
Laser Irradiation ◽  
Direct Evidence ◽  
Pulsed Laser ◽  
Time Resolved ◽  
Edge Structure ◽  
X Ray ◽  
Nanosecond Pulsed Laser ◽  
Amorphous Si ◽  
X Ray Absorption ◽  
Pulsed Laser Irradiation

ABSTRACTWe report time-resolved X-ray absorption and extended X-ray absorption fine structure (EXAFS) measurements on amorphous silicon under nanosecond pulsed-laser irradiation. Each measurement was performed with one laser shot in the X-ray energy range from 90 to 300 eV. An X-ray absorption spectrum for induced liquid Si (liq*Si) was first observed above an energy density of 0.17 J/cm2. It differs significantly from the spectrum for amorphous Si and characteristically shows the disappearance of the Si-L(II,III) edge structure at around 100 eV. This phenomenon is interpreted in terms of a significant reduction in the 3s-like character of the unfilled part of the conduction band of liq*Si compared to that of amorphous Si. This is the first direct evidence that liq*Si has a metallic-like electronic structure. Timeresolved EXAFS results are also discussed briefly.

Optimized Nanosecond Pulsed Laser Micromachining of Y-TZP Ceramics

2008 ◽  
Vol 91 (2) ◽  
pp. 391-397 ◽  
Author(s):  
Xin Wang ◽  
Jonathan D. Shephard ◽  
Fraser C. Dear ◽  
Duncan P. Hand
Keyword(s):  
Pulsed Laser ◽  
Laser Micromachining ◽  
Nanosecond Pulsed Laser

Time-resolved optical measurement of Si lattice temperature during nanosecond pulsed laser annealing

Physica B+C ◽  
1983 ◽  
Vol 117-118 ◽  
pp. 1024-1026 ◽  
Author(s):  
Kouichi Murakami ◽  
Hisayoshi Itoh ◽  
Kōki Takita ◽  
Kohzoh Masuda
Keyword(s):  
Laser Annealing ◽  
Optical Measurement ◽  
Pulsed Laser ◽  
Lattice Temperature ◽  
Time Resolved ◽  
Pulsed Laser Annealing ◽  
Nanosecond Pulsed Laser

Time-resolved optical studies of oxide-encapsulated silicon during pulsed laser melting

1988 ◽  
Vol 3 (3) ◽  
pp. 498-505 ◽  
Author(s):  
G. E. Jellison ◽  
D. H. Lowndes ◽  
J. W. Sharp
Keyword(s):  
Laser Annealing ◽  
Laser Energy ◽  
Threshold Energy ◽  
Pulsed Laser ◽  
Silicon Layer ◽  
Oxide Thickness ◽  
Time Resolved ◽  
Model Calculations ◽  
Near Surface ◽  
Surface Profiling

Nanosecond time-resolved reflectivity and ellipsometry experiments have been performed on (100) Si wafers encapsulated by 5.5–76.2 nm thick thermal oxides, using pulsed KrF (248 nm) laser energy densities sufficient to melt the Si beneath the oxide. Post-irradiation nulling ellipsometry, optical microphotography, and surface profiling measurements were carried out. It was found that the threshold energy density required to melt the Si varies with oxide thickness; this is explained primarily by the reflective properties of the oxide overlayer. The time-resolved reflectivity and ellipsometry measurements show that rippling of the SiO2 layer occurs on the 20–40 ns timescale and results in a decrease in specular reflectivity of the rippled silicon surface beneath. Optical model calculations suggest that pulsed laser annealing through a thick oxide layer results in a damaged near-surface silicon layer (∼ 30 nm thick); this layer contains defects that are probably responsible for the degraded performance of devices.

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