Time-resolved optical measurement of Si lattice temperature during nanosecond pulsed laser annealing

ABSTRACTTime-resolved Si lattice-temperature measurement has been developed on wide time scale from 10−9 to 100 sec during laser annealing, by utilizing the time-dependent optical interference in Si on sappire. This interference is due to small changes in Si refractive index induced by temporal changes in Si lattice-temperature. For ns–pulsed laser annealing, part of the absorbed photon energy is found to be transferred into lattice (phonons) in a time much shorter than 40-ns pulse duration. A new method using a microscope is demonstrated for time- and space-resolved Si latticetemperature measurements during cw laser annealing.

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Synchrotron X-Ray Study of the Structure of Silicon During Pulsed Laser Processing

MRS Proceedings ◽

10.1557/proc-4-13 ◽

1981 ◽

Vol 4 ◽

Cited By ~ 1

Author(s):

B. C. Larson ◽

C. W. White ◽

T. S. Noggle ◽

J. F. Barhorst ◽

D. Mills

Keyword(s):

Laser Annealing ◽

Pulsed Laser ◽

Temperature Profiles ◽

X Ray Diffraction ◽

Time Resolved ◽

Near Surface ◽

X Ray ◽

Pulsed Laser Annealing ◽

Pulsed Laser Processing ◽

Thermal Melting

ABSTRACTSynchrotron x-ray pulses have been used to make nanosecond resolution time-resolved x-ray diffraction measurements on silicon during pulsed laser annealing. Thermal expansion analysis of near-surface strains during annealing has provided depth dependent temperature profiles indicating >1100°C temperatures and diffraction from boron implanted silicon has shown evidence for near-surface melting. These results are in qualitative agreement with the thermal melting model of laser annealing.

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Time-resolved optical transmission during pulsed-laser annealing of ion-implanted amorphous silicon-on-sapphire

Microelectronics Reliability ◽

10.1016/0026-2714(83)91489-0 ◽

1983 ◽

Vol 23 (1) ◽

pp. 197-198

Keyword(s):

Amorphous Silicon ◽

Optical Transmission ◽

Laser Annealing ◽

Pulsed Laser ◽

Time Resolved ◽

Pulsed Laser Annealing ◽

Ion Implanted

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Surface Temperatures and Dissociation Loss During the Pulsed Laser Annealing of GaAs

MRS Proceedings ◽

10.1557/proc-23-633 ◽

1983 ◽

Vol 23 ◽

Author(s):

John T.A. Pollock ◽

Alex Rose

Keyword(s):

Laser Annealing ◽

Pulsed Laser ◽

Pressure Data ◽

Incident Laser ◽

Time Resolved ◽

Dissociation Pressure ◽

Pulsed Laser Annealing ◽

Modelling Studies ◽

Maximum Temperatures ◽

Good Agreement

ABSTRACTFrom reported equilibrium partial and total dissociation pressure data for GaAs and melt times derived from reported time resolved reflectivity experiments, estimates have been made of the anticipated rate of As loss. Good agreement was found with experimentally determined As loss. A similar approach using experimentally determined Ga loss data allowed estimates of the maximum temperatures reached during pulsed laser annealing. These temperatures are considerably higher than suggested in thermal modelling studies. The boiling point of Ga gould be exceeded at incident laser energies >0.8 J cm−2.

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