Influence of deposition conditions on the thermal stability of ZnO:Al films grown by rf magnetron sputtering

2001 ◽  
Vol 19 (1) ◽  
pp. 171-174 ◽  
Author(s):  
F.-J. Haug ◽  
Zs. Geller ◽  
H. Zogg ◽  
A. N. Tiwari ◽  
C. Vignali

2010 ◽  
Vol 256 (21) ◽  
pp. 6350-6353 ◽  
Author(s):  
Tokiyoshi Matsuda ◽  
Mamoru Furuta ◽  
Takahiro Hiramatsu ◽  
Hiroshi Furuta ◽  
Chaoyang Li ◽  
...  


2010 ◽  
Vol 21 (28) ◽  
pp. 285707 ◽  
Author(s):  
L Khomenkova ◽  
X Portier ◽  
J Cardin ◽  
F Gourbilleau


Hyomen Kagaku ◽  
2003 ◽  
Vol 24 (7) ◽  
pp. 411-416 ◽  
Author(s):  
Takamasa MIKAMI ◽  
Hideki NAKAZAWA ◽  
Yoshiharu ENTA ◽  
Maki SUEMITSU ◽  
Masao MASHITA


1998 ◽  
Author(s):  
Rui Xiong ◽  
Zuoyi Li ◽  
Xiaofei Yang ◽  
Zuoqi Hu ◽  
Zheng Li ◽  
...  




1998 ◽  
Vol 325 (1-2) ◽  
pp. 55-59 ◽  
Author(s):  
Z.Q Liu ◽  
W.J Wang ◽  
T.M Wang ◽  
S Chao ◽  
S.K Zheng


1995 ◽  
Vol 10 (12) ◽  
pp. 3062-3067 ◽  
Author(s):  
O. Lenoble ◽  
J.F. Bobo ◽  
H. Fischer ◽  
Ph. Bauer ◽  
M.F. Ravet ◽  
...  

Iron/alumina multilayers have been deposited on sapphire wafers using RF magnetron sputtering. To study the interdiffusion, the multilayers were annealed in a tubular furnace under a 10−7 mbar vacuum, and the samples examined by using a combination of classical diffractometry (θ/2θ) and Grazing Incidence Scattering (GIS) for the phase determination, and Small Angle X-ray Scattering (SAXS) for the superstructure of the multilayers. In all cases, in the as-deposited state the alumina is amorphous and the iron is crystalline in the bcc phase. Thermal anneals at temperatures between 573 and 873 K give evidence for segregation to the interfaces. At higher temperatures, interdiffusion occurs, leading to the formation of different phases. The Fe-Al2O3 interdiffusion coefficient has been evaluated in the temperature range from 873 to 1273 K.





2021 ◽  
pp. 93-98
Author(s):  
Evgenii Erofeev ◽  
Egor Polyntsev ◽  
Sergei Ishutkin

Electrophysical characteristics and their thermal stability of thin-film resistors based on tantalum nitride (TaN) obtained by reactive magnetron sputtering were investigated. The optimal modes of the magnetron sputtering process are determined, ensuring the Ta2N phase film composition with the value of the specific electrical resistance of 250 μm cm and high thermal stability of the parameters. On the basis of the investigations carried out, thin-film matching resistors were manufactured for use as part of an electro-optical InP-based MZ modulator



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