Molecular-beam epitaxy growth of InGaAs–InAlAs high electron mobility transistors with enhanced electron densities and measurement of InAlAs surface potential

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1379793 ◽

2001 ◽

Vol 19 (4) ◽

pp. 1524 ◽

Author(s):

E. Skuras ◽

G. Pennelli ◽

A. R. Long ◽

C. R. Stanley

Keyword(s):

Molecular Beam Epitaxy ◽

Surface Potential ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron Mobility Transistors ◽

Molecular Beam Epitaxy Growth ◽

High Electron ◽

Electron Densities ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Molecular beam epitaxy growth and characterization of InGaP/InGaAs pseudomorphic high electron mobility transistors (HEMTs) having a channel layer over critical layer thickness

IEEE Transactions on Electron Devices ◽

10.1109/16.987103 ◽

2002 ◽

Vol 49 (3) ◽

pp. 354-360 ◽

Author(s):

Seong-June Jo ◽

Jeong Hoon Kim ◽

Jong-In Song

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron Mobility Transistors ◽

Molecular Beam Epitaxy Growth ◽

High Electron ◽

Critical Layer Thickness ◽

High Electron Mobility ◽

Electron Mobility Transistors

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High-frequency AlGaN/GaN polarization-induced high electron mobility transistors grown by plasma-assisted molecular-beam epitaxy

Applied Physics Letters ◽

10.1063/1.125418 ◽

1999 ◽

Vol 75 (23) ◽

pp. 3653-3655 ◽

Author(s):

M. J. Murphy ◽

K. Chu ◽

H. Wu ◽

W. Yeo ◽

W. J. Schaff ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

High Frequency ◽

Molecular Beam ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Structural and morphological properties of GaN buffer layers grown by ammonia molecular beam epitaxy on SiC substrates for AlGaN/GaN high electron mobility transistors

Journal of Applied Physics ◽

10.1063/1.2919163 ◽

2008 ◽

Vol 103 (9) ◽

pp. 093529 ◽

Author(s):

A. L. Corrion ◽

C. Poblenz ◽

F. Wu ◽

J. S. Speck

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron Mobility Transistors ◽

Buffer Layers ◽

Morphological Properties ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Fabrication of strained and double heterojunction In/sub x/Ga/sub 1-x/P/In/sub 0.2/Ga/sub 0.8/As high electron mobility transistors grown by solid-source molecular beam epitaxy

IEEE Transactions on Electron Devices ◽

10.1109/16.841249 ◽

2000 ◽

Vol 47 (5) ◽

pp. 1115-1117 ◽

Author(s):

S.F. Yoon ◽

B.P. Gay ◽

H.Q. Zheng ◽

H.T. Kam ◽

J. Degenhardt

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Double Heterojunction

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Impact of recess etching and surface treatments on ohmic contacts regrown by molecular-beam epitaxy for AlGaN/GaN high electron mobility transistors

Applied Physics Letters ◽

10.1063/1.4959831 ◽

2016 ◽

Vol 109 (4) ◽

pp. 041602 ◽

Author(s):

S. Joglekar ◽

M. Azize ◽

M. Beeler ◽

E. Monroy ◽

T. Palacios

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Ohmic Contacts ◽

Molecular Beam ◽

High Electron Mobility Transistors ◽

Surface Treatments ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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AlGaN/GaN high electron mobility transistors on 100 mm silicon substrates by plasma molecular beam epitaxy

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3549889 ◽

2011 ◽

Vol 29 (3) ◽

pp. 03C107 ◽

Author(s):

W. E. Hoke ◽

T. D. Kennedy ◽

J. J. Mosca ◽

A. J. Kerr ◽

A. Torabi ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron Mobility Transistors ◽

Silicon Substrates ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by Plasma-Assisted Molecular Beam Epitaxy

IEICE Transactions on Electronics ◽

10.1093/ietele/e89-c.7.906 ◽

2006 ◽

Vol E89-C (7) ◽

pp. 906-912 ◽

Author(s):

A. CORRION

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Recent Developments

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Molecular beam epitaxy regrowth of pseudomorphic high electron mobility transistors using thin in layer

10.1109/edms.1994.863849 ◽

2005 ◽

Author(s):

C.K. Peng ◽

W.H. Lan ◽

S.S. Chen ◽

S.L. Tu ◽

S.J. Yang

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Algan/Gan High-Electron-Mobility Transistors Grown By Ammonia Source Molecular Beam Epitaxy

Gallium Nitride (GaN) ◽

10.4324/b19387-2 ◽

2017 ◽

pp. 45-61

Author(s):

Yvon Cordier

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

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Molecular beam epitaxy growth of metamorphic high electron mobility transistors and metamorphic heterojunction bipolar transistors on Ge and Ge-on-insulator/Si substrates

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2884749 ◽

2008 ◽

Vol 26 (3) ◽

pp. 1115 ◽

Author(s):

D. Lubyshev ◽

J. M. Fastenau ◽

Y. Wu ◽

W. K. Liu ◽

M. T. Bulsara ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

High Electron Mobility Transistors ◽

Bipolar Transistors ◽

Molecular Beam Epitaxy Growth ◽

High Electron ◽

High Electron Mobility ◽

Si Substrates ◽

Electron Mobility Transistors

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