High-performance n-channel 13.56MHz plasma-enhanced chemical vapor deposition nanocrystalline silicon thin-film transistors

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.2194027 ◽

2006 ◽

Vol 24 (3) ◽

pp. 618-623 ◽

Author(s):

Czang-Ho Lee ◽

Andrei Sazonov ◽

Arokia Nathan

Keyword(s):

Thin Film ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Thin Film Transistors ◽

High Performance ◽

Chemical Vapor ◽

Nanocrystalline Silicon ◽

Silicon Thin Film

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Batch-Process for High Performance Amorphous-Silicon Thin-Film Transistors Using Hot-Wall Chemical-Vapor-Deposition Method

10.7567/ssdm.1991.pc5-2 ◽

1991 ◽

Author(s):

Byung-Chul AHN ◽

Kazuhiro SHIMIZU ◽

Tsutomu SATOH ◽

Hiroshi KANOH ◽

Osamu SUGIURA ◽

...

Keyword(s):

Thin Film ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Thin Film Transistors ◽

High Performance ◽

Chemical Vapor ◽

Batch Process ◽

Chemical Vapor Deposition Method ◽

Deposition Method ◽

Silicon Thin Film

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High performance amorphous-silicon thin film transistors prepared by catalytic chemical vapor deposition with high deposition rate

Thin Solid Films ◽

10.1016/s0040-6090(01)01289-5 ◽

2001 ◽

Vol 395 (1-2) ◽

pp. 330-334 ◽

Author(s):

Masahiro Sakai ◽

Takayuki Tsutsumi ◽

Tatsuo Yoshioka ◽

Atsushi Masuda ◽

Hideki Matsumura

Keyword(s):

Thin Film ◽

Chemical Vapor Deposition ◽

Amorphous Silicon ◽

Deposition Rate ◽

Vapor Deposition ◽

Thin Film Transistors ◽

High Performance ◽

Chemical Vapor ◽

High Deposition Rate ◽

Silicon Thin Film

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High performance poly-crystalline silicon thin film transistors fabricated using remote plasma chemical vapor deposition of SiO/sub 2/

IEEE Electron Device Letters ◽

10.1109/55.285370 ◽

1994 ◽

Vol 15 (2) ◽

pp. 69-71 ◽

Author(s):

M. Sekiya ◽

M. Hara ◽

N. Sano ◽

A. Kohno ◽

T. Sameshima

Keyword(s):

Thin Film ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Thin Film Transistors ◽

High Performance ◽

Crystalline Silicon ◽

Chemical Vapor ◽

Plasma Chemical ◽

Silicon Thin Film ◽

Plasma Chemical Vapor Deposition

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High-mobility nanocrystalline silicon thin-film transistors fabricated by plasma-enhanced chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.1942641 ◽

2005 ◽

Vol 86 (22) ◽

pp. 222106 ◽

Author(s):

Czang-Ho Lee ◽

Andrei Sazonov ◽

Arokia Nathan

Keyword(s):

Thin Film ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Thin Film Transistors ◽

High Mobility ◽

Chemical Vapor ◽

Nanocrystalline Silicon ◽

Silicon Thin Film

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Polycrystalline silicon thin film transistors deposited at low substrate temperature by remote plasma chemical vapor deposition using SiF4/H2

Applied Physics Letters ◽

10.1063/1.112937 ◽

1994 ◽

Vol 65 (13) ◽

pp. 1644-1646 ◽

Author(s):

Jae Ik Woo ◽

Hong Joo Lim ◽

Jin Jang

Keyword(s):

Thin Film ◽

Chemical Vapor Deposition ◽

Substrate Temperature ◽

Vapor Deposition ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Plasma Chemical ◽

Silicon Thin Film ◽

Plasma Chemical Vapor Deposition

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Characterization of Polycrystalline Silicon Thin Film Transistors Fabricated by Ultrahigh-Vacuum Chemical Vapor Deposition and Chemical Mechanical Polishing

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.4278 ◽

1997 ◽

Vol 36 (Part 1, No. 7A) ◽

pp. 4278-4282 ◽

Author(s):

Hsiao-Yi Lin ◽

Chun-Yen Chang ◽

Tan Fu Lei ◽

Juing-Yi Cheng ◽

Hua-Chou Tseng ◽

...

Keyword(s):

Thin Film ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Mechanical Polishing ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Ultrahigh Vacuum ◽

Chemical Vapor ◽

Silicon Thin Film

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Amorphous Silicon Thin Film Transistors Prepared by Plasma Enhanced Chemical Vapor Deposition

IEEJ Transactions on Fundamentals and Materials ◽

10.1541/ieejfms1990.110.10_659 ◽

1990 ◽

Vol 110 (10) ◽

pp. 659-666

Author(s):

Kaichi Fukuda ◽

Nobuki Ibaraki

Keyword(s):

Thin Film ◽

Chemical Vapor Deposition ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Thin Film Transistors ◽

Chemical Vapor ◽

Silicon Thin Film

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Deposition of Pure Hydrogenated Amorphous Silicon by Plasma-Enhanced Chemical Vapor Deposition for Polycrystalline Silicon Thin Film Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.44.3813 ◽

2005 ◽

Vol 44 (6A) ◽

pp. 3813-3816

Author(s):

Masato Hiramatsu ◽

Yoshinobu Kimura ◽

Masayuki Jyumonji ◽

Mikihiko Nishitani ◽

Masakiyo Matsumura

Keyword(s):

Thin Film ◽

Chemical Vapor Deposition ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Hydrogenated Amorphous Silicon ◽

Chemical Vapor ◽

Silicon Thin Film ◽

Hydrogenated Amorphous

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Improved mobility of amorphous silicon thin-film transistors deposited by hot-wire chemical vapor deposition on glass substrates

Applied Physics Letters ◽

10.1063/1.119001 ◽

1997 ◽

Vol 70 (20) ◽

pp. 2714-2716 ◽

Author(s):

V. Chu ◽

J. Jarego ◽

H. Silva ◽

T. Silva ◽

M. Reissner ◽

...

Keyword(s):

Thin Film ◽

Chemical Vapor Deposition ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Thin Film Transistors ◽

Chemical Vapor ◽

Hot Wire ◽

Silicon Thin Film ◽

Glass Substrates

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Study on Stability of Amorphous Silicon Thin-Film Transistors Prepared by Catalytic Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.8700 ◽

2008 ◽

Vol 47 (12) ◽

pp. 8700-8706 ◽

Author(s):

Shogo Nishizaki ◽

Keisuke Ohdaira ◽

Hideki Matsumura

Keyword(s):

Thin Film ◽

Chemical Vapor Deposition ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Thin Film Transistors ◽

Chemical Vapor ◽

Silicon Thin Film ◽

Catalytic Chemical Vapor Deposition

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