Fabrication and characterization of high breakdown voltage AlGaN∕GaN heterojunction field effect transistors on sapphire substrates

2006 ◽  
Vol 24 (6) ◽  
pp. 2601 ◽  
Author(s):  
Y. C. Choi ◽  
M. Pophristic ◽  
B. Peres ◽  
M. G. Spencer ◽  
L. F. Eastman
Keyword(s):  
Breakdown Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Sapphire Substrates ◽  
High Breakdown Voltage ◽  
Fabrication And Characterization ◽  
Heterojunction Field Effect Transistors

High breakdown voltage AlGaN/GaN heterojunction field effect transistors on sapphire

2008 ◽  
Vol 5 (6) ◽  
pp. 2013-2015 ◽  
Author(s):  
Junxia Shi ◽  
Y. C. Choi ◽  
M. Pophristic ◽  
M. G. Spencer ◽  
L. F. Eastman
Keyword(s):  
Breakdown Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Breakdown Voltage ◽  
Heterojunction Field Effect Transistors

Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors

1996 ◽  
Vol 69 (10) ◽  
pp. 1438-1440 ◽  
Author(s):  
Y.‐F. Wu ◽  
B. P. Keller ◽  
S. Keller ◽  
D. Kapolnek ◽  
P. Kozodoy ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Breakdown Voltage ◽  
Heterojunction Field Effect Transistors ◽  
Very High

Fabrication and Characterization of GaN-based Nanostructure Field Effect Transistors

2021 ◽  
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Author(s):  
Dong-Hyeok Son ◽  
Terirama Thingujam ◽  
Quan Dai ◽  
Jeong-Gil Kim ◽  
Sorin Cristoloveanu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Fabrication And Characterization

Fabrication and Characterization of P-implanted Si-nanowire Field-effect Transistors (n-SiNW FETs)

2009 ◽  
Vol 55 (1) ◽  
pp. 28-31 ◽  
Author(s):  
Seung-Yong Lee ◽  
Chan-Oh Jang ◽  
Jung-Hwan Hyung ◽  
Dong-Joo Kim ◽  
Tae-Hong Kim ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Si Nanowire ◽  
Fabrication And Characterization
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