Characterizations of InN films on Si(111) substrate grown by metal-organic chemical vapor deposition with a predeposited In layer and a two-step growth method

2007 ◽  
Vol 25 (4) ◽  
pp. 701-705 ◽  
Author(s):  
K. J. Chang ◽  
J. Y. Chang ◽  
M. C. Chen ◽  
S. M. Lahn ◽  
C. J. Kao ◽  
...  
2019 ◽  
Vol 954 ◽  
pp. 72-76
Author(s):  
Ze Qi Li ◽  
Zi Min Chen ◽  
Wei Qu Chen ◽  
Gang Wang

In this paper, Ga2O3 thin films were grown on c-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD). There was phase transition for samples grown with different flow rates of triethyl-gallium (TEGa) and deionized water (H2O). It is found that ε-Ga2O3 is difficult to coalesce and the phase mixture by β­Ga2O3 takes place if the flow rates of TEGa and H2O are too high. However, by using multiple-step growth method, the film became fully coalesced. High-quality ε-Ga2O3 thin film with atomically flat surface and multilayer morphology was obtained.


ACS Omega ◽  
2021 ◽  
Vol 6 (15) ◽  
pp. 10343-10351
Author(s):  
Sayema Chowdhury ◽  
Anupam Roy ◽  
Chison Liu ◽  
Md Hasibul Alam ◽  
Rudresh Ghosh ◽  
...  

2016 ◽  
Vol 16 (5) ◽  
pp. 5168-5172 ◽  
Author(s):  
Young-Dae Cho ◽  
In-Geun Lee ◽  
Sun-Wook Kim ◽  
Dong-Hwan Jun ◽  
In-Hye Choi ◽  
...  

2021 ◽  
Vol 15 (6) ◽  
pp. 2170024
Author(s):  
Yuxuan Zhang ◽  
Zhaoying Chen ◽  
Kaitian Zhang ◽  
Zixuan Feng ◽  
Hongping Zhao

ACS Nano ◽  
2020 ◽  
Author(s):  
Assael Cohen ◽  
Avinash Patsha ◽  
Pranab K. Mohapatra ◽  
Miri Kazes ◽  
Kamalakannan Ranganathan ◽  
...  

2021 ◽  
Vol 118 (16) ◽  
pp. 162109
Author(s):  
Esmat Farzana ◽  
Fikadu Alema ◽  
Wan Ying Ho ◽  
Akhil Mauze ◽  
Takeki Itoh ◽  
...  

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