Structure and properties of polymer core-shell systems: Helium ion microscopy and electrical conductivity studies

Author(s):  
Valery Bliznyuk ◽  
Alexander Pud ◽  
Larry Scipioni ◽  
Chuong Huynh ◽  
Nikolay Ogurtsov ◽  
...  
2014 ◽  
Vol 1707 ◽  
Author(s):  
Marilena Re ◽  
Francesca Di Benedetto ◽  
Emanuela Pesce ◽  
Ilio Miccoli ◽  
Paola Prete ◽  
...  

ABSTRACTIn this work we present new results on the morphological and microstructural properties of GaAs-AlxGa1-xAs (x≈0.24) core-shell nanowires (NWs) epitaxially grown on (111)B-GaAs substrates by Au-catalyst assisted metalorganic vapor phase epitaxy (MOVPE). Optimized growth conditions allowed us to fabricate highly-dense arrays of vertically-aligned (i.e., along the <111> crystallographic orientation) NWs. The NW arrays were investigated by Helium Ion microscopy (HeIM) and X-ray double- and triple-axis measurements and reciprocal space mapping (RSM). We demonstrate that these techniques can be employed in order to correlate some intrinsically local morphological information with statistically relevant (i.e. averaged over millions-to-billions of NWs) data on the NW structural properties.


2015 ◽  
Vol 53 (4) ◽  
pp. 287-293
Author(s):  
Byung-Hyun Choi ◽  
Young Jin Kang ◽  
Sung-Hun Jung ◽  
Yong-Tae An ◽  
Mi-Jung Ji

2014 ◽  
pp. 32-35
Author(s):  
Teodor Paunescu ◽  
Sylvie Breton ◽  
Dennis Brown

Scanning ◽  
2008 ◽  
Vol 30 (6) ◽  
pp. 457-462 ◽  
Author(s):  
Michael T. Postek ◽  
Andras E. Vladár
Keyword(s):  

2018 ◽  
Vol 3 (1) ◽  
pp. 1800250 ◽  
Author(s):  
Nedal Said ◽  
Antonis Chatzinotas ◽  
Matthias Schmidt
Keyword(s):  

2010 ◽  
Vol 241 ◽  
pp. 012080
Author(s):  
B J Inkson ◽  
X Liu ◽  
Y Peng ◽  
M A E Jepson ◽  
C Rodenburg
Keyword(s):  

2017 ◽  
Vol 4 (6) ◽  
pp. 1289-1304 ◽  
Author(s):  
Serguei Chiriaev ◽  
◽  
Nis Dam Madsen ◽  
Horst-Günter Rubahn ◽  
Shuang Ma Andersen ◽  
...  

2012 ◽  
Vol 02 (02) ◽  
pp. 192-198 ◽  
Author(s):  
Xuan Li ◽  
Yiding Shen ◽  
Haihua Wang ◽  
Guiqiang Fei

2015 ◽  
Vol 6 ◽  
pp. 1125-1137 ◽  
Author(s):  
Yuri V Petrov ◽  
Oleg F Vyvenko

Reflection ion microscopy (RIM) is a technique that uses a low angle of incidence and scattered ions to form an image of the specimen surface. This paper reports on the development of the instrumentation and the analysis of the capabilities and limitations of the scanning RIM in a helium ion microscope (HIM). The reflected ions were detected by their “conversion” to secondary electrons on a platinum surface. An angle of incidence in the range 5–10° was used in the experimental setup. It was shown that the RIM image contrast was determined mostly by surface morphology but not by the atomic composition. A simple geometrical analysis of the reflection process was performed together with a Monte Carlo simulation of the angular dependence of the reflected ion yield. An interpretation of the RIM image formation and a quantification of the height of the surface steps were performed. The minimum detectable step height was found to be approximately 5 nm. RIM imaging of an insulator surface without the need for charge compensation was successfully demonstrated.


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