Aluminum-doped zinc oxide formed by atomic layer deposition for use as anodes in organic light emitting diodes

2013 ◽  
Vol 31 (1) ◽  
pp. 01A101 ◽  
Author(s):  
Su Cheol Gong ◽  
Yong-June Choi ◽  
Hyuncheol Kim ◽  
Chang-Sun Park ◽  
Hyung-Ho Park ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Atomic Layer Deposition ◽  
Light Emitting Diodes ◽  
Atomic Layer ◽  
Organic Light Emitting Diodes ◽  
Light Emitting ◽  
Organic Light ◽  
Layer Deposition ◽  
Aluminum Doped Zinc Oxide

Realization of highly-dense Al2O3 gas barrier for top-emitting organic light-emitting diodes by atomic layer deposition

RSC Advances ◽  
2015 ◽  
Vol 5 (127) ◽  
pp. 104613-104620 ◽  
Author(s):  
Min Li ◽  
Dongyu Gao ◽  
Shuo Li ◽  
Zhongwei Zhou ◽  
Jianhua Zou ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Light Emitting Diodes ◽  
Atomic Layer ◽  
Organic Light Emitting Diodes ◽  
Gas Barrier ◽  
Light Emitting ◽  
Organic Light ◽  
Layer Deposition ◽  
Thin Film Encapsulation

In this paper Al2O3 films are prepared with a method of atomic layer deposition (ALD) as the thin film encapsulation technology for top-emitting organic light-emitting diodes (TE-OLED).

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