Impact of proton irradiation on dc performance of AlGaN/GaN high electron mobility transistors

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.4813785 ◽

2013 ◽

Vol 31 (4) ◽

pp. 042202 ◽

Author(s):

Lu Liu ◽

Camilo Velez Cuervo ◽

Yuyin Xi ◽

Fan Ren ◽

Stephen J. Pearton ◽

...

Keyword(s):

Electron Mobility ◽

Proton Irradiation ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Proton irradiation effects on AlN/GaN high electron mobility transistors

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3482335 ◽

2010 ◽

Vol 28 (5) ◽

pp. L47-L51 ◽

Author(s):

C. F. Lo ◽

C. Y. Chang ◽

B. H. Chu ◽

H.-Y. Kim ◽

J. Kim ◽

...

Keyword(s):

Electron Mobility ◽

Proton Irradiation ◽

High Electron Mobility Transistors ◽

High Electron ◽

Irradiation Effects ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Degradation of dc characteristics of InAlN/GaN high electron mobility transistors by 5 MeV proton irradiation

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3698402 ◽

2012 ◽

Vol 30 (3) ◽

pp. 031202 ◽

Author(s):

Chien-Fong Lo ◽

L. Liu ◽

T. S. Kang ◽

Fan Ren ◽

C. Schwarz ◽

...

Keyword(s):

Electron Mobility ◽

Proton Irradiation ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Dc Characteristics

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Effect of proton irradiation on thermal resistance and breakdown voltage of InAlN/GaN high electron mobility transistors

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.4891629 ◽

2014 ◽

Vol 32 (5) ◽

pp. 051203 ◽

Author(s):

Travis Anderson ◽

Andrew Koehler ◽

Ya-Hsi Hwang ◽

Yueh-Ling Hsieh ◽

Shun Li ◽

...

Keyword(s):

Thermal Resistance ◽

Breakdown Voltage ◽

Electron Mobility ◽

Proton Irradiation ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Enhancement of AlGaN/GaN high electron mobility transistors off-state drain breakdown voltage via backside proton irradiation

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.4864070 ◽

2014 ◽

Vol 32 (2) ◽

pp. 021203 ◽

Author(s):

Shun Li ◽

Ya-Hsi Hwang ◽

Yueh-Ling Hsieh ◽

Lei Lei ◽

Fan Ren ◽

...

Keyword(s):

Breakdown Voltage ◽

Electron Mobility ◽

Proton Irradiation ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Theoretical analysis of proton irradiation effects on AlGaN/GaN high-electron-mobility transistors

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.4929544 ◽

2015 ◽

Vol 33 (5) ◽

pp. 051212 ◽

Author(s):

Ling Lv ◽

Xiaohua Ma ◽

He Xi ◽

Linyue Liu ◽

Yanrong Cao ◽

...

Keyword(s):

Theoretical Analysis ◽

Electron Mobility ◽

Proton Irradiation ◽

High Electron Mobility Transistors ◽

High Electron ◽

Irradiation Effects ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Study on Effect of Proton Irradiation Energy in AlGaN/GaN Metal-Oxide Semiconductor High Electron Mobility Transistors

ECS Transactions ◽

10.1149/06914.0129ecst ◽

2015 ◽

Vol 69 (14) ◽

pp. 129-135 ◽

Author(s):

S. Ahn ◽

C. Dong ◽

W. Zhu ◽

B.-J. Kim ◽

Y.-H. Hwang ◽

...

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Proton Irradiation ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Irradiation Energy

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Effects of Proton Irradiation on the Reliability of InAlN/GaN High Electron Mobility Transistors

ECS Meeting Abstracts ◽

10.1149/ma2012-02/41/3015 ◽

2012 ◽

Keyword(s):

Electron Mobility ◽

Proton Irradiation ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Study on Effect of Proton Irradiation Energy in AlGaN/GaN Metal-Oxide Semiconductor High Electron Mobility Transistors

ECS Meeting Abstracts ◽

10.1149/ma2015-02/33/1223 ◽

2015 ◽

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Proton Irradiation ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Irradiation Energy

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Study on the effects of proton irradiation on the dc characteristics of AlGaN/GaN high electron mobility transistors with source field plate

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.4866401 ◽

2014 ◽

Vol 32 (2) ◽

pp. 022202 ◽

Author(s):

Lu Liu ◽

Ya-Hsi Hwang ◽

Yuyin Xi ◽

Fan Ren ◽

Valentin Craciun ◽

...

Keyword(s):

Electron Mobility ◽

Proton Irradiation ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Field Plate ◽

Electron Mobility Transistors ◽

Dc Characteristics ◽

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Study of proton irradiation effects on AlGaN/GaN high electron mobility transistors

Microelectronics Reliability ◽

10.1016/j.microrel.2011.04.022 ◽

2011 ◽

Vol 51 (12) ◽

pp. 2168-2172 ◽

Author(s):

Ling Lv ◽

J.G. Ma ◽

Y.R. Cao ◽

J.C. Zhang ◽

W. Zhang ◽

...

Keyword(s):

Electron Mobility ◽

Proton Irradiation ◽

High Electron Mobility Transistors ◽

High Electron ◽

Irradiation Effects ◽

High Electron Mobility ◽

Electron Mobility Transistors

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