Effect of proton irradiation on thermal resistance and breakdown voltage of InAlN/GaN high electron mobility transistors

2014 ◽  
Vol 32 (5) ◽  
pp. 051203 ◽  
Author(s):  
Travis Anderson ◽  
Andrew Koehler ◽  
Ya-Hsi Hwang ◽  
Yueh-Ling Hsieh ◽  
Shun Li ◽  
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Keyword(s):  
Thermal Resistance ◽  
Breakdown Voltage ◽  
Electron Mobility ◽  
Proton Irradiation ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Improved breakdown voltage and RF characteristics in AlGaN/GaN high-electron-mobility transistors achieved by slant field plates

2014 ◽  
Vol 7 (9) ◽  
pp. 096501 ◽  
Author(s):  
Kengo Kobayashi ◽  
Shinya Hatakeyama ◽  
Tomohiro Yoshida ◽  
Yuhei Yabe ◽  
Daniel Piedra ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

scholarly journals Meandering Gate Edges for Breakdown Voltage Enhancement in AlGaN/GaN High Electron Mobility Transistors

2020 ◽  
Vol 217 (5) ◽  
pp. 1900766
Author(s):  
Sandeep Kumar ◽  
Surani Bin Dolmanan ◽  
Sudhiranjan Tripathy ◽  
Rangarajan Muralidharan ◽  
Digbijoy Neelim Nath
Keyword(s):  
Breakdown Voltage ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors
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