Role of plasma properties in controlling crystallinity and phase in oxide films grown by plasma-enhanced atomic layer epitaxy

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.5128208 ◽

2019 ◽

Vol 37 (6) ◽

pp. 060909 ◽

Author(s):

David R. Boris ◽

Virginia D. Wheeler ◽

Jason R. Avila ◽

Syed B. Qadri ◽

Charles R. Eddy ◽

...

Keyword(s):

Oxide Films ◽

Atomic Layer ◽

Atomic Layer Epitaxy ◽

Plasma Properties

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The Role of Plasma Properties in Plasma Enhanced Atomic Layer Epitaxy

10.14332/svc21.proc.0063 ◽

2021 ◽

Author(s):

S.G. Walton ◽

Keyword(s):

Atomic Layer ◽

Atomic Layer Epitaxy ◽

Plasma Properties

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Deposition and etching of tantalum oxide films in atomic layer epitaxy process

Journal of Crystal Growth ◽

10.1016/0022-0248(94)90019-1 ◽

1994 ◽

Vol 144 (1-2) ◽

pp. 116-119 ◽

Author(s):

Jaan Aarik ◽

Aleks Aidla ◽

Kaupo Kukli ◽

Teet Uustare

Keyword(s):

Tantalum Oxide ◽

Oxide Films ◽

Atomic Layer ◽

Atomic Layer Epitaxy

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Atomic layer epitaxy of GaAs and role of As‐source materials on self‐limiting mechanism

Applied Physics Letters ◽

10.1063/1.107283 ◽

1992 ◽

Vol 60 (12) ◽

pp. 1498-1500 ◽

Author(s):

Kazuyuki Fujii ◽

Ikuo Suemune ◽

Tomoaki Koui ◽

Masamichi Yamanishi

Keyword(s):

Atomic Layer ◽

Atomic Layer Epitaxy ◽

Source Materials

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Surface stoichiometry and the role of adsorbates during GaAs atomic layer epitaxy

Applied Surface Science ◽

10.1016/0169-4332(94)90214-3 ◽

1994 ◽

Vol 82-83 ◽

pp. 171-179 ◽

Author(s):

J.Randall Creighton

Keyword(s):

Atomic Layer ◽

Atomic Layer Epitaxy

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Systematic study on dynamic atomic layer epitaxy of InN on/in +c-GaN matrix and fabrication of fine-structure InN/GaN quantum wells: Role of high growth temperature

Journal of Applied Physics ◽

10.1063/1.4967928 ◽

2016 ◽

Vol 120 (22) ◽

pp. 225303 ◽

Author(s):

Akihiko Yoshikawa ◽

Kazuhide Kusakabe ◽

Naoki Hashimoto ◽

Eun-Sook Hwang ◽

Daichi Imai ◽

...

Keyword(s):

Fine Structure ◽

Quantum Wells ◽

Systematic Study ◽

Growth Temperature ◽

High Growth ◽

Atomic Layer ◽

Atomic Layer Epitaxy ◽

High Growth Temperature

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The Role of Surface and Gas Phase Reactions in Atomic Layer Epitaxy

Mechanisms of Reactions of Organometallic Compounds with Surfaces - NATO ASI Series ◽

10.1007/978-1-4899-2522-0_29 ◽

1989 ◽

pp. 257-266

Author(s):

P. Daniel Dapkus ◽

Steve P. DenBaars ◽

Qisheng Chen ◽

B. Y. Maa

Keyword(s):

Gas Phase ◽

Atomic Layer ◽

Atomic Layer Epitaxy ◽

Gas Phase Reactions

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The role of surface and gas phase reactions in atomic layer epitaxy

Progress in Crystal Growth and Characterization ◽

10.1016/0146-3535(89)90019-1 ◽

1989 ◽

Vol 19 (1-2) ◽

pp. 137-147 ◽

Author(s):

P.D. Dapkus ◽

S.P. DenBaars ◽

Q. Chen ◽

W.G. Jeong ◽

B.Y. Maa

Keyword(s):

Gas Phase ◽

Atomic Layer ◽

Atomic Layer Epitaxy ◽

Gas Phase Reactions

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Role of Hydrogen in Atomic Layer Epitaxy of GaAs Using GaCl3

Japanese Journal of Applied Physics ◽

10.1143/jjap.31.l1730 ◽

1992 ◽

Vol 31 (Part 2, No. 12B) ◽

pp. L1730-L1732 ◽

Author(s):

Ryuji Kobayashi ◽

Katsumi Ishikawa ◽

Satoru Narahara ◽

Fumio Hasegawa

Keyword(s):

Atomic Layer ◽

Atomic Layer Epitaxy

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Layered tantalum-aluminum oxide films deposited by atomic layer epitaxy

Thin Solid Films ◽

10.1016/0040-6090(93)90173-m ◽

1993 ◽

Vol 225 (1-2) ◽

pp. 296-298 ◽

Author(s):

H. Kattelus ◽

M. Ylilammi ◽

J. Saarilahti ◽

J. Antson ◽

S. Lindfors

Keyword(s):

Aluminum Oxide ◽

Oxide Films ◽

Atomic Layer ◽

Atomic Layer Epitaxy

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Atomic Layer Epitaxy of Tungsten Oxide Films Using Oxyfluorides as Metal Precursors

Journal of The Electrochemical Society ◽

10.1149/1.1392445 ◽

1999 ◽

Vol 146 (8) ◽

pp. 3139-3143 ◽

Author(s):

P. Tägtström ◽

P. Maårtensson ◽

U. Jansson ◽

J.‐O. Carlsson

Keyword(s):

Tungsten Oxide ◽

Oxide Films ◽

Atomic Layer ◽

Atomic Layer Epitaxy ◽

Metal Precursors

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