Rapid thermal oxidation of low-pressure chemical vapor deposition amorphous silicon films

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.584857 ◽

1990 ◽

Vol 8 (1) ◽

pp. 10 ◽

Author(s):

F. Gualandris

Keyword(s):

Chemical Vapor Deposition ◽

Amorphous Silicon ◽

Thermal Oxidation ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Rapid Thermal Oxidation ◽

Pressure Chemical

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Crystallization of amorphous silicon films during low pressure chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.94080 ◽

1983 ◽

Vol 42 (9) ◽

pp. 835-837 ◽

Author(s):

E. Kinsbron ◽

M. Sternheim ◽

R. Knoell

Keyword(s):

Chemical Vapor Deposition ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Pressure Chemical

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Recrystallization of amorphous silicon films deposited by low‐pressure chemical vapor deposition from Si2H6gas

Journal of Applied Physics ◽

10.1063/1.347215 ◽

1991 ◽

Vol 69 (3) ◽

pp. 1703-1706 ◽

Author(s):

Kenji Nakazawa

Keyword(s):

Chemical Vapor Deposition ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Pressure Chemical

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Investigation of the dosage effect on the activation of arsenic- and boron-implanted low-pressure chemical vapor deposition (LPCVD) amorphous-silicon films

Applied Surface Science ◽

10.1016/0169-4332(95)00258-8 ◽

1996 ◽

Vol 92 ◽

pp. 372-377

Author(s):

Fang-Shing Wang ◽

Meng-Jin Tsai ◽

Wen-Koi Lai ◽

Huang-Chung Cheng

Keyword(s):

Chemical Vapor Deposition ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Dosage Effect ◽

Silicon Films ◽

Pressure Chemical

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Reverse Annealing of Arsenic-Implanted Low-Pressure Chemical Vapor Deposition (LPCVD) Amorphous-Silicon Films

Japanese Journal of Applied Physics ◽

10.1143/jjap.33.l1254 ◽

1994 ◽

Vol 33 (Part 2, No. 9A) ◽

pp. L1254-L1256 ◽

Author(s):

Meng-Jin Tsai ◽

Fang-Shin Wang ◽

Huang-Chung Cheng

Keyword(s):

Chemical Vapor Deposition ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Pressure Chemical

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Low Pressure Chemical Vapor Deposition of Ultra-Thin, Pinhole-Free Amorphous Silicon Films

2009 IEEE Workshop on Microelectronics and Electron Devices ◽

10.1109/wmed.2009.4816139 ◽

2009 ◽

Author(s):

Anish Khandekar ◽

Jeff Hull ◽

Sachin Joshi

Keyword(s):

Chemical Vapor Deposition ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Pressure Chemical

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Pressure dependence ofinsituboron‐doped silicon films prepared by low‐pressure chemical vapor deposition. I. Microstructure

Journal of Applied Physics ◽

10.1063/1.343794 ◽

1989 ◽

Vol 66 (10) ◽

pp. 4806-4811 ◽

Author(s):

P. Joubert ◽

M. Sarret ◽

L. Haji ◽

L. Hamedi ◽

B. Loisel

Keyword(s):

Chemical Vapor Deposition ◽

Pressure Dependence ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Doped Silicon ◽

Pressure Chemical

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Deposition and electrical properties ofinsituphosphorus‐doped silicon films formed by low‐pressure chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.338036 ◽

1987 ◽

Vol 61 (5) ◽

pp. 1898-1904 ◽

Author(s):

Arthur J. Learn ◽

Derrick W. Foster

Keyword(s):

Chemical Vapor Deposition ◽

Electrical Properties ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Doped Silicon ◽

Pressure Chemical

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ChemInform Abstract: In situ Doping of Silicon Films Prepared by Low Pressure Chemical Vapor Deposition Using Disilane and Phosphine.

10.1002/chin.199037340 ◽

1990 ◽

Vol 21 (37) ◽

Author(s):

L. D. MADSEN ◽

L. WEAVER

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Pressure Chemical

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Raman spectroscopy of amorphous and microcrystalline silicon films deposited by low‐pressure chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.360468 ◽

1995 ◽

Vol 78 (12) ◽

pp. 6999-7006 ◽

Author(s):

A. T. Voutsas ◽

M. K. Hatalis ◽

J. Boyce ◽

A. Chiang

Keyword(s):

Raman Spectroscopy ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Microcrystalline Silicon ◽

Pressure Chemical

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Crystallization of amorphous silicon–germanium films deposited by low pressure chemical vapor deposition

Journal of Non-Crystalline Solids ◽

10.1016/s0022-3093(99)00784-x ◽

2000 ◽

Vol 266-269 ◽

pp. 689-693 ◽

Author(s):

D Guillet ◽

M Sarret ◽

L Haji ◽

R Rogel ◽

O Bonnaud

Keyword(s):

Chemical Vapor Deposition ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Silicon Germanium ◽

Chemical Vapor ◽

Low Pressure ◽

Pressure Chemical ◽

Germanium Films ◽

Amorphous Silicon Germanium

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