Scanning capacitance microscopy measurement of two-dimensional dopant profiles across junctions

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.589807 ◽

1998 ◽

Vol 16 (1) ◽

pp. 339 ◽

Author(s):

J. J. Kopanski

Keyword(s):

Two Dimensional ◽

Scanning Capacitance Microscopy ◽

Microscopy Measurement ◽

Dopant Profiles

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Quantitative two‐dimensional dopant profiling of abrupt dopant profiles by cross‐sectional scanning capacitance microscopy

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.580260 ◽

1996 ◽

Vol 14 (3) ◽

pp. 1168-1171 ◽

Author(s):

Y. Huang ◽

C. C. Williams ◽

M. A. Wendman

Keyword(s):

Two Dimensional ◽

Cross Sectional ◽

Scanning Capacitance Microscopy ◽

Dopant Profiling ◽

Dopant Profiles

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Precise comparison of two-dimensional dopant profiles measured by electron holography and scanning capacitance microscopy

2011 IEEE Nanotechnology Materials and Devices Conference ◽

10.1109/nmdc.2011.6155352 ◽

2011 ◽

Author(s):

Jun-Mo Yang ◽

U. Shaislamov ◽

Moon Seop Hyun ◽

Jung Ho Yoo ◽

Jeoung Woo Kim ◽

...

Keyword(s):

Electron Holography ◽

Two Dimensional ◽

Scanning Capacitance Microscopy ◽

Dopant Profiles

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Direct comparison of two-dimensional dopant profiles by scanning capacitance microscopy with TSUPREM4 process simulation

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.589808 ◽

1998 ◽

Vol 16 (1) ◽

pp. 344 ◽

Author(s):

J. S. McMurray

Keyword(s):

Process Simulation ◽

Two Dimensional ◽

Scanning Capacitance Microscopy ◽

Dopant Profiles

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Two-dimensional profiling of carriers in a buried heterostructure multi-quantum-well laser: Calibrated scanning spreading resistance microscopy and scanning capacitance microscopy

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1511211 ◽

2002 ◽

Vol 20 (5) ◽

pp. 2126 ◽

Author(s):

D. Ban ◽

E. H. Sargent ◽

St. J. Dixon-Warren ◽

T. Grevatt ◽

G. Knight ◽

...

Keyword(s):

Quantum Well ◽

Two Dimensional ◽

Spreading Resistance ◽

Scanning Capacitance Microscopy ◽

Quantum Well Laser ◽

Buried Heterostructure ◽

Multi Quantum Well

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Quantitative scanning capacitance microscopy analysis of two-dimensional dopant concentrations at nanoscale dimensions

Journal of Electronic Materials ◽

10.1007/bf02666260 ◽

1996 ◽

Vol 25 (2) ◽

pp. 301-304 ◽

Author(s):

A. Erickson ◽

L. Sadwick ◽

G. Neubauer ◽

J. Kopanski ◽

D. Adderton ◽

...

Keyword(s):

Two Dimensional ◽

Scanning Capacitance Microscopy ◽

Microscopy Analysis

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TWO-DIMENSIONAL DOPANT PROFILING BY SCANNING CAPACITANCE MICROSCOPY

Annual Review of Materials Science ◽

10.1146/annurev.matsci.29.1.471 ◽

1999 ◽

Vol 29 (1) ◽

pp. 471-504 ◽

Author(s):

C. C. Williams

Keyword(s):

Two Dimensional ◽

Scanning Capacitance Microscopy ◽

Dopant Profiling

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Two dimensional boron diffusion determination by scanning capacitance microscopy

Materials Science and Engineering B ◽

10.1016/s0921-5107(01)00999-0 ◽

2002 ◽

Vol 91-92 ◽

pp. 220-223 ◽

Author(s):

F. Giannazzo ◽

V. Raineri ◽

F. Priolo

Keyword(s):

Two Dimensional ◽

Boron Diffusion ◽

Scanning Capacitance Microscopy

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Two-dimensional scanning capacitance microscopy measurements of cross-sectioned very large scale integration test structures

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.588487 ◽

1996 ◽

Vol 14 (1) ◽

pp. 426 ◽

Author(s):

Gabi Neubauer

Keyword(s):

Large Scale ◽

Very Large Scale Integration ◽

Two Dimensional ◽

Scanning Capacitance Microscopy ◽

Integration Test ◽

Large Scale Integration ◽

Scale Integration

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Factors affecting two-dimensional dopant profiles obtained by transmission electron microscopy of etched p-n junctions in Si

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.589832 ◽

1998 ◽

Vol 16 (1) ◽

pp. 471 ◽

Author(s):

Suneeta S. Neogi

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Two Dimensional ◽

Factors Affecting ◽

Transmission Electron ◽

Dopant Profiles

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Two-dimensional dopant profiling of a 60 nm gate length nMOSFET using scanning capacitance microscopy

International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) ◽

10.1109/iedm.1998.746419 ◽

2002 ◽

Author(s):

W. Timp ◽

M.L. O'Malley ◽

R.N. Kleiman ◽

J.P. Garno

Keyword(s):

Gate Length ◽

Two Dimensional ◽

Scanning Capacitance Microscopy ◽

Dopant Profiling

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