TWO-DIMENSIONAL DOPANT PROFILING BY SCANNING CAPACITANCE MICROSCOPY

1999 ◽  
Vol 29 (1) ◽  
pp. 471-504 ◽  
Author(s):  
C. C. Williams
Keyword(s):  
Two Dimensional ◽  
Scanning Capacitance Microscopy ◽  
Dopant Profiling

Guidelines for Two-Dimensional Dopant Profiling Using Scanning Capacitance Microscopy

2000 ◽  
Author(s):  
Axel Born ◽  
R. Wiesendanger
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Edge Effects ◽  
Two Dimensional ◽  
Stray Capacitance ◽  
Scanning Capacitance Microscopy ◽  
Dopant Profiling ◽  
3D Geometry ◽  
Cv Measurements ◽  
Preparation Techniques

Abstract This paper provides guidance and insights on the use of scanning capacitance microscopy (SCM) in semiconductor failure analysis. It explains why SCM systems are constrained by rigid performance tradeoffs and how CV measurements are affected by large stray capacitance and as well as edge effects associated with the 3D geometry of the sample and probe. It also explains how samples should be prepared and how proper sample preparation techniques combined with optimally selected voltages make it possible to accurately determine doping concentrations, even in p-n junctions.

scholarly journals Two-dimensional dopant Profiling on Operating MOSFET by Scanning Capacitance Microscopy

Hyomen Kagaku ◽  
2007 ◽  
Vol 28 (2) ◽  
pp. 84-90
Author(s):  
Koji USUDA ◽  
Kenjiro KIMURA ◽  
Kei KOBAYASHI ◽  
Hirofumi YAMADA
Keyword(s):  
Two Dimensional ◽  
Scanning Capacitance Microscopy ◽  
Dopant Profiling

Scanning capacitance microscopy applied to two-dimensional dopant profiling of semiconductors

1997 ◽  
Vol 44 (1-3) ◽  
pp. 46-51 ◽  
Author(s):  
Joseph J. Kopanski ◽  
Jay F. Marchiando ◽  
Jeremiah R. Lowney
Keyword(s):  
Two Dimensional ◽  
Scanning Capacitance Microscopy ◽  
Dopant Profiling

Two-dimensional carrier profiling of advanced sub-micron silicon devices using Scanning Capacitance Microscopy

1999 ◽  
Vol 5 (S2) ◽  
pp. 960-961
Author(s):  
Atul. A. Konkar ◽  
Wei Chen ◽  
Kari Noehring
Keyword(s):  
Spatial Resolution ◽  
Electrical Characterization ◽  
High Sensitivity ◽  
Good Resolution ◽  
Two Dimensional ◽  
Lateral Direction ◽  
Scanning Capacitance Microscopy ◽  
Dopant Profiling ◽  
Technology Roadmap ◽  
Depth Direction

With the continuing push for reduction in the device dimensions into the deep sub-u,m dimensions, the critical need for physical and electrical characterization on this sub-μ,m scale is evident. The National Technology Roadmap has identified need for two-dimensional (2D) dopant/carrier profiling with a spatial resolution of 10 nm. Though current techniques used for dopant profiling such as secondary ion mass spectroscopy (SIMS) and spreading resistance profiling (SRP) have a high sensitivity, these offer good resolution only in the depth direction. The spatial resolution in the lateral direction in these techniques is limited to several tens or hundreds of microns. To acheieve the required lateral spatial resolution different scanning probe based techniques have been explored. One of the most promising of these class of techniques is scanning capacitance microscopy (SCM). In SCM a conductive atomic force microscope (AFM) probe tip is scanned across the surface and simultaneously an a.c. bias is applied between the tip and the sample.

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