Enhancement of electroluminescence properties in delta-doped quantum well of bipolar resonant tunneling diode

1994 ◽  
Author(s):  
Hanyu Sheng ◽  
Soo-Jin Chua
1993 ◽  
Vol 07 (07) ◽  
pp. 465-470 ◽  
Author(s):  
HANYU SHENG ◽  
SOO-JIN CHUA ◽  
JUHA SINKKONEN

A simple capacitance formula based on a semiclassical electron transport theory is given. The results show that the charges stored in the quantum well of a resonant tunneling diode have a considerable effect on the capacitance in the resonant region. The calculated capacitance is consistent with the experimental results.


1986 ◽  
Vol 25 (Part 2, No. 9) ◽  
pp. L786-L788 ◽  
Author(s):  
Hideo Toyoshima ◽  
Yuji Ando ◽  
Akihiko Okamoto ◽  
Tomohiro Itoh

1995 ◽  
Vol 09 (14) ◽  
pp. 849-858
Author(s):  
HANYU SHENG

An analytical model of a δ-doped quantum well is developed. The results show that by using δ-doped quantum well structures, the area densities of the electrons and holes in the conduction and valence bands, respectively, can be increased by four orders of magnitudes compared with the n-i-p structure. Therefore the electroluminescence enhancement can be expected for the bipolar resonant tunneling diode of δ-doped quantum well.


Sign in / Sign up

Export Citation Format

Share Document