A detailed investigation of strain patterning effect on bilayer InAs/GaAs quantum dot with varying GaAs barrier thickness

2016 ◽  
Author(s):  
B. Tongbram ◽  
N. Sehara ◽  
J. Singhal ◽  
D. P. Panda ◽  
S. Chakrabarti
Keyword(s):  
Quantum Dot ◽  
Barrier Thickness ◽  
Gaas Barrier ◽  
Gaas Quantum Dot

Time-Integrated Photoluminescence Studies of In0.3Ga0.7As/GaAs Quantum Dot Molecules

2006 ◽  
Vol 935 ◽  
Author(s):  
William Kerr ◽  
Valeria Gabriela Stoleru ◽  
Anup Pancholi
Keyword(s):  
Quantum Dot ◽  
Electronic Properties ◽  
Temperature Dependent ◽  
Quantum Dot Molecules ◽  
Gaas Barrier ◽  
Optical And Electronic Properties ◽  
Gaas Quantum Dot ◽  
Photoluminescence Studies ◽  
Stacked Quantum Dots ◽  
Good Agreement

ABSTRACTWe investigate experimentally and theoretically optical and electronic properties of In0.3Ga0.7As/GaAs quantum dot molecules (QDMs) formed by two layers of self-assembled, vertically stacked quantum dots (QDs). Structures with In0.3Ga0.7As/GaAs QD layers separated by a thin GaAs barrier were grown by solid source molecular beam epitaxy, and were characterized by time-integrated photoluminescence (PL). For the temperature-dependent PL measurements a He-flow optical cryostat was used to control the temperature between 4 and 300 K. The experimentally observed behavior is in good agreement with that expected from our eight-band k·p calculations. Optical and electronic properties of these QDMs are further compared with those of dots grown under conditions that did not promote vertical organization.

Theoretical study of excitons in GaAs quantum dot molecules obtained by nanoholes filling

2021 ◽  
Vol 124 ◽  
pp. 105614
Author(s):  
S. Tilouche ◽  
A. Sayari ◽  
M. Omri ◽  
S. Souilem ◽  
L. Sfaxi ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Theoretical Study ◽  
Quantum Dot Molecules ◽  
Gaas Quantum Dot
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