Low-temperature process for very high aspect ratio silicon microstructures using SOG etch mask

1995 ◽  
Author(s):  
X. Trent Huang ◽  
Liang-Yuh Chen ◽  
Noel C. MacDonald
Keyword(s):  
Low Temperature ◽  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Silicon Microstructures ◽  
Very High ◽  
Low Temperature Process

EFAB: High Aspect Ratio, Arbitrary 3-D Metal Microstructures Using a Low-Cost Automated Batch Process

1999 ◽  
Author(s):  
Fan-Gang Tseng ◽  
Gang Zhang ◽  
Uri Frodis ◽  
Adam Cohen ◽  
Florian Mansfeld ◽  
...  
Keyword(s):  
Low Temperature ◽  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Low Cost ◽  
Batch Process ◽  
Unlimited Number ◽  
Metal Layers ◽  
Electrochemical Fabrication ◽  
Low Temperature Process

Abstract EFAB (“Electrochemical FABrication”) is a new micromachining process utilizing an innovative “Instant Masking” (IM) technique to electrochemically deposit an unlimited number of metal layers for microfabrication. Through this approach, high-aspect-ratio microstructures with arbitrary 3-D geometry can be rapidly and automatically batch-fabricated at low temperature (< 60 °C) using an inexpensive desktop machine. IC-MEMS integration can also be carried out by this low temperature process.

One-Pot Synthesis of High Aspect Ratio Copper Nanowires in Aqueous Solution

2015 ◽  
Vol 1119 ◽  
pp. 34-37 ◽  
Author(s):  
Michael Tan ◽  
Mary Donnabelle Balela
Keyword(s):  
Aqueous Solution ◽  
Low Temperature ◽  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Synthesis Temperature ◽  
Copper Nanowires ◽  
One Pot ◽  
Cu Nanowires ◽  
Nanoparticle Growth ◽  
Low Temperature Process

We report a one-pot, low temperature process for the synthesis of high-aspect ratio copper nanowires in aqueous solution for 1 hr. Ethylene diamine (EDA) was utilized to promote anisotropic reduction of Cu (II) by hydrazine. Cu nanowires with mean diameters around 90 nm and lengths exceeding 50 μm were synthesized using 180 mM EDA at 60°C, giving an effective aspect ratio of about 450. Without EDA, nanoparticle growth is observed. The synthesis temperature was also significant in limiting nanoparticle formation. Decreasing the temperature resulted to 1D growth and fewer nanoparticles.

Photopolymerization-assisted self-assembly as a strategy to obtain a dispersion of very high aspect ratio nanostructures in a polystyrene matrix

2019 ◽  
Vol 112 ◽  
pp. 704-713 ◽  
Author(s):  
Ú.M. Montoya Rojo ◽  
C.C. Riccardi ◽  
M.D. Ninago ◽  
A.E. Ciolino ◽  
M.A. Villar ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Self Assembly ◽  
Polystyrene Matrix ◽  
Very High

scholarly journals Low temperature fabrication of Fe2O3 nanorod film coated with ultra-thin g-C3N4 for a direct z-scheme exerting photocatalytic activities

RSC Advances ◽  
2018 ◽  
Vol 8 (59) ◽  
pp. 33600-33613 ◽  
Author(s):  
Suhee Kang ◽  
Joonyoung Jang ◽  
Rajendra C. Pawar ◽  
Sung-Hoon Ahn ◽  
Caroline Sunyong Lee
Keyword(s):  
Low Temperature ◽  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Photocatalytic Activities

The engineered high aspect ratio of Fe2O3 nanorods coated with g-C3N4 demonstrates z-scheme mechanism, showing the best performance in 4-nitrophenol photodegradation and H2 evolution.

scholarly journals Very high aspect ratio through silicon via reflectometry

2017 ◽  
Author(s):  
J. Bauer ◽  
F. Heinrich ◽  
O. Fursenko ◽  
S. Marschmeyer ◽  
A. Bluemich ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Through Silicon Via ◽  
Very High

The feasibility of a tokamak reactor with a very high aspect ratio plasma

2000 ◽  
Vol 48 (3-4) ◽  
pp. 347-354
Author(s):  
Y Murakami ◽  
K Shinya ◽  
S Nishio
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Tokamak Reactor ◽  
Very High

Metal-assisted chemical etching for very high aspect ratio grooves inn-type silicon wafers

2014 ◽  
Vol 24 (12) ◽  
pp. 125026 ◽  
Author(s):  
Katherine Booker ◽  
Maureen Brauers ◽  
Erin Crisp ◽  
Shakir Rahman ◽  
Klaus Weber ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Chemical Etching ◽  
Silicon Wafers ◽  
Type Silicon ◽  
Metal Assisted Chemical Etching ◽  
Very High

Ultrathin Te Nanowires: An Excellent Platform for Controlled Synthesis of Ultrathin Platinum and Palladium Nanowires/Nanotubes with Very High Aspect Ratio

2009 ◽  
Vol 21 (18) ◽  
pp. 1850-1854 ◽  
Author(s):  
Hai-Wei Liang ◽  
Shuo Liu ◽  
Jun-Yan Gong ◽  
Shang-Bing Wang ◽  
Lei Wang ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Controlled Synthesis ◽  
Palladium Nanowires ◽  
Very High
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