Impact of rapid thermal annealing on dilute nitride (GaAsN)-capped InAs/GaAs quantum dots exhibiting optical emission beyond ~1.5 μm
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2015 ◽
Vol 158
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pp. 149-152
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2009 ◽
Vol 54
(4)
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pp. 1655-1659
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Keyword(s):
2013 ◽
Vol 52
(12R)
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pp. 125001
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Keyword(s):
2000 ◽
Vol 208
(1-4)
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pp. 791-794
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1998 ◽
Vol 37
(Part 1, No. 12B)
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pp. 7165-7168
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