Effects of Rapid Thermal Annealing on the Structural and Optical Properties of InAs/GaAs Self-Assembled Quantum Dots

1998 ◽  
Vol 37 (Part 1, No. 12B) ◽  
pp. 7165-7168 ◽  
Author(s):  
Shinho Cho ◽  
Chan Kyung Hyon ◽  
Eun Kyu Kim ◽  
Suk-Ki Min
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Structural And Optical Properties ◽  
Self Assembled

Effects of Rapid Thermal Annealing on the Optical Properties of InAs Quantum Dots with Asymmetric InGaAs Layers

2009 ◽  
Vol 54 (4) ◽  
pp. 1655-1659 ◽  
Author(s):  
Do Yeob Kim ◽  
Min Su Kim ◽  
Tae Hoon Kim ◽  
Ghun Sik Kim ◽  
Hyun Young Choi ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Inas Quantum Dots

Influence of Rapid Thermal Annealing on The Structural and Optical Properties of Pulsed Laser Deposited SnS Thin Films

2015 ◽  
Vol 36 (7) ◽  
pp. 811-820
Author(s):  
刘 磊 LIU Lei ◽  
马明杰 MA Ming-jie ◽  
刘丹丹 LIU Dan-dan ◽  
郭慧尔 GUO Hui-er ◽  
史成武 SHI Cheng-wu ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Pulsed Laser ◽  
Structural And Optical Properties ◽  
Sns Thin Films

Effects of rapid thermal annealing on self-assembled InGaAs/GaAs quantum dots superlattice

2000 ◽  
Vol 208 (1-4) ◽  
pp. 791-794 ◽  
Author(s):  
Q.D Zhuang ◽  
J.M Li ◽  
X.X Wang ◽  
Y.P Zeng ◽  
Y.T Wang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Self Assembled

The Impact of Cap Layers on the Structural and Optical Properties of Self-Assembled InAs/GaAs Quantum Dots

2012 ◽  
Vol 571 ◽  
pp. 269-272
Author(s):  
Peng Tian ◽  
Chong Qing Huang ◽  
Wen Hua Luo ◽  
Jing Liu
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
High Temperature ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Structural And Optical Properties ◽  
Indium Composition ◽  
Cap Layer ◽  
Self Assembled ◽  
The Impact

Self-assembled InAs/GaAs quantum dots structures with low temperature and high temperature cap layers are grown by meta-organic chemical vapor deposition. The effects of Indium composition of high temperature InGaAs cap layer on the structural and optical properties of quantum dots are investigated by the atomic force microscopy and photoluminescence. Emission peak wavelengths shift from 1218 nm to 1321 nm when the Indium composition of high temperature InGaAs cap layer increase form 0 to 0.17.

Emission wavelength trimming of self-assembled InGaAs/GaAs quantum dots with GaAs/AlGaAs superlattices by rapid thermal annealing

2007 ◽  
Vol 515 (10) ◽  
pp. 4344-4347 ◽  
Author(s):  
H.S. Djie ◽  
D.-N. Wang ◽  
B.S. Ooi ◽  
J.C.M. Hwang ◽  
X.-M. Fang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Emission Wavelength ◽  
Self Assembled
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