Abstract
Since strain engineering plays a key role in semiconductor technology development, a reliable and reproducible technique to measure local strain in devices is necessary for process development and failure analysis. In this paper, geometric phase analysis of high angle annular dark field - scanning transmission electron microscope images is presented as an effective technique to measure local strains in the current node of Si based transistors.
In this paper, we investigate the geometric phase of the field interacting with a moving four-level atom in the presence of Kerr medium. The results show that the atomic motion, the field-mode structure and Kerr medium play important roles in the evolution of the system dynamics. As illustration, we examine the behavior of the geometric phase and entanglement with experimentally accessible parameters. Some new aspects are observed and discussed.