Ultraviolet wavefront manipulation using topological insulator metasurfaces based on geometric phase

2021 ◽  
Vol 487 ◽  
pp. 126812
Author(s):  
Mingli Wan ◽  
Pengfei Ji ◽  
Rongrong Wang ◽  
Xiaopeng Zhang ◽  
Mingli Tian ◽  
...  
Author(s):  
Jayhoon Chung ◽  
Guoda Lian ◽  
Lew Rabenberg

Abstract Since strain engineering plays a key role in semiconductor technology development, a reliable and reproducible technique to measure local strain in devices is necessary for process development and failure analysis. In this paper, geometric phase analysis of high angle annular dark field - scanning transmission electron microscope images is presented as an effective technique to measure local strains in the current node of Si based transistors.


2019 ◽  
Vol 129 (3) ◽  
pp. 404-412 ◽  
Author(s):  
S. O. Filnov ◽  
Yu. A. Surnin ◽  
A. V. Koroleva ◽  
I. I. Klimovskikh ◽  
D. A. Estyunin ◽  
...  

2020 ◽  
Vol 4 (9) ◽  
Author(s):  
Nan Liu ◽  
Xuefan Niu ◽  
Yuxin Liu ◽  
Qinghua Zhang ◽  
Lin Gu ◽  
...  

2020 ◽  
Vol 117 (26) ◽  
pp. 262401
Author(s):  
N. Meyer ◽  
K. Geishendorf ◽  
J. Walowski ◽  
A. Thomas ◽  
M. Münzenberg

2021 ◽  
Vol 103 (15) ◽  
Author(s):  
Jennifer Cano ◽  
Shiang Fang ◽  
J. H. Pixley ◽  
Justin H. Wilson

2012 ◽  
Vol 10 (01) ◽  
pp. 1250007 ◽  
Author(s):  
NOUR ZIDAN ◽  
S. ABDEL-KHALEK ◽  
M. ABDEL-ATY

In this paper, we investigate the geometric phase of the field interacting with a moving four-level atom in the presence of Kerr medium. The results show that the atomic motion, the field-mode structure and Kerr medium play important roles in the evolution of the system dynamics. As illustration, we examine the behavior of the geometric phase and entanglement with experimentally accessible parameters. Some new aspects are observed and discussed.


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