Temperature and modulation dependence of spectral linewidth in distributed Bragg reflector laser diodes

1991 ◽  
Author(s):  
Shinzoh Suzaki ◽  
Masanori Ishii ◽  
Tsutomu Watanabe ◽  
Alan T. Shiota
1989 ◽  
Vol 25 (6) ◽  
pp. 1280-1287 ◽  
Author(s):  
M. Takahashi ◽  
Y. Michitsuji ◽  
M. Yoshimura ◽  
Y. Yamazoe ◽  
H. Nishizawa ◽  
...  

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A.G. Deryagin ◽  
V.V. Dudelev ◽  
S.N. Losev ◽  
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1992 ◽  
Vol 31 (Part 2, No. 2B) ◽  
pp. L183-L185 ◽  
Author(s):  
Minoru Maeda ◽  
Takaaki Hirata ◽  
Masayuki Suehiro ◽  
Mamoru Hihara ◽  
Akira Yamaguchi ◽  
...  

1994 ◽  
Vol 30 (6) ◽  
pp. 496-497 ◽  
Author(s):  
J.S. Major ◽  
S. O'Brien ◽  
R.J. Lang ◽  
V. Gulgazov ◽  
D.F. Welch

2001 ◽  
Vol 79 (25) ◽  
pp. 4076-4078 ◽  
Author(s):  
C. Marinelli ◽  
M. Bordovsky ◽  
L. J. Sargent ◽  
M. Gioannini ◽  
J. M. Rorison ◽  
...  

2010 ◽  
Vol 150 (39-40) ◽  
pp. 1955-1958 ◽  
Author(s):  
N.K. Cho ◽  
K.W. Kim ◽  
J.D. Song ◽  
W.J. Choi ◽  
J.I. Lee

2020 ◽  
Vol 6 (1) ◽  
pp. eaav7523 ◽  
Author(s):  
Yong-Ho Ra ◽  
Roksana Tonny Rashid ◽  
Xianhe Liu ◽  
Sharif Md. Sadaf ◽  
Kishwar Mashooq ◽  
...  

Surface-emitting semiconductor lasers have been widely used in data communications, sensing, and recently in Face ID and augmented reality glasses. Here, we report the first achievement of an all-epitaxial, distributed Bragg reflector (DBR)–free electrically injected surface-emitting green laser by exploiting the photonic band edge modes formed in dislocation-free gallium nitride nanocrystal arrays, instead of using conventional DBRs. The device operates at ~523 nm and exhibits a threshold current of ~400 A/cm2, which is over one order of magnitude lower compared to previously reported blue laser diodes. Our studies open a new paradigm for developing low-threshold surface-emitting laser diodes from the ultraviolet to the deep visible (~200 to 600 nm), wherein the device performance is no longer limited by the lack of high-quality DBRs, large lattice mismatch, and substrate availability.


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