Spin-currents, FMR spin-pumping, and THz emission from optimized 3D/5D heavy metals interfaces (Conference Presentation)

2019 ◽  
Author(s):  
Henri Jaffrès
Entropy ◽  
2011 ◽  
Vol 13 (2) ◽  
pp. 316-331 ◽  
Author(s):  
Jean-Eric Wegrowe ◽  
Henri-Jean Drouhin
Keyword(s):  

2010 ◽  
Vol 81 (14) ◽  
Author(s):  
Akihito Takeuchi ◽  
Kazuhiro Hosono ◽  
Gen Tatara

2022 ◽  
Vol 12 (1) ◽  
Author(s):  
Sergi Martin-Rio ◽  
Carlos Frontera ◽  
Alberto Pomar ◽  
Lluis Balcells ◽  
Benjamin Martinez

AbstractSpin pumping (SP) is a well-established method to generate pure spin currents allowing efficient spin injection into metals and semiconductors avoiding the problem of impedance mismatch. However, to disentangle pure spin currents from parasitic effects due to spin rectification effects (SRE) is a difficult task that is seriously hampering further developments. Here we propose a simple method that allows suppressing SRE contribution to inverse spin Hall effect (ISHE) voltage signal avoiding long and tedious angle-dependent measurements. We show an experimental study in the well-known Py/Pt system by using a coplanar waveguide (CPW). Results obtained demonstrate that the sign and size of the measured transverse voltage signal depends on the width of the sample along the CPW active line. A progressive reduction of this width evidences that SRE contribution to the measured transverse voltage signal becomes negligibly small for sample width below 200 μm. A numerical solution of the Maxwell equations in the CPW-sample setup, by using the Landau-Lifshitz equation with the Gilbert damping term (LLG) as the constitutive equation of the media, and with the proper set of boundary conditions, confirms the obtained experimental results.


Author(s):  
А.А. Ежевский ◽  
Д.В. Гусейнов ◽  
А.В. Сухоруков ◽  
Е.А. Калинина ◽  
А.В. Новиков ◽  
...  

Doping of silicon with bismuth leads to additional spin scattering of the conduction electron by the spin-orbit potential introduced by a heavy donor. In this paper, we discuss spin flip scattering influence on the generation of spin currents in silicon with electronic conductivity. Based on the theory of spin pumping and the diffusion model, the values of spin currents and voltages of the ISHE are calculated with varying the type of donor and its concentration and the spin diffusion lengths. Calculations made it possible to find the dependences of the magnitudes of the effects on the parameters of silicon layers doped with bismuth, and to explain the absence of ISHE signals when the silicon layer is doped only with phosphorus or antimony with a concentration of Nd> 1019 cm-3.


2012 ◽  
Vol 508 ◽  
pp. 347-352 ◽  
Author(s):  
H. Nakayama ◽  
T. Tashiro ◽  
R. Takahashi ◽  
Y. Kajiwara ◽  
T. Ohtani ◽  
...  

The Inverse Spin-Hall Effect (ISHE), Conversion of Spin Currents into Charge Currents, Has Recently Been Observed in Paramagnetic Metal/Ferrimagnetic Insulator Bilayer Films by Means of the Spin Pumping. Here we Investigate the ISHE Induced by the Spin Pumping on Pt/Ti/Y3Fe5O12 and Pt/Ti/BiY2Fe5O12 Films, where the Y3Fe5O12 (BiY2Fe5O12) and Pt Layers Are Separated by Thin Ti Layer. In these Systems, we Measured Electric Voltage due to the ISHE in Pt/Ti/Y3Fe5O12 (BiY2Fe5O12) Systems at Room Temperature. The Experimental Results Show that the ISHE Signal Disappears in the Pt/Ti/Y3Fe5O12 (BiY2Fe5O12) Systems. These Results Indicate that the Spin Pumping between Y3Fe5O12 (BiY2Fe5O12) and Ti Layer Is Suppressed. This Method Enables us to Suppress the Spin Currents without Non-Magnetic Insulators.


Author(s):  
Mathias Weiler ◽  
Georg Woltersdorf ◽  
Matthias Althammer ◽  
Hans Huebl ◽  
Sebastian T.B. Goennenwein

2016 ◽  
Vol 117 (17) ◽  
Author(s):  
C. Schweizer ◽  
M. Lohse ◽  
R. Citro ◽  
I. Bloch
Keyword(s):  

2018 ◽  
Vol 17 (6) ◽  
pp. 499-503 ◽  
Author(s):  
Kun-Rok Jeon ◽  
Chiara Ciccarelli ◽  
Andrew J. Ferguson ◽  
Hidekazu Kurebayashi ◽  
Lesley F. Cohen ◽  
...  
Keyword(s):  

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