Camera-based single-particle orientation imaging of quantum dots

Author(s):  
Duncan Ryan
Nano Letters ◽  
2001 ◽  
Vol 1 (10) ◽  
pp. 551-556 ◽  
Author(s):  
E. P. A. M. Bakkers ◽  
Z. Hens ◽  
A. Zunger ◽  
A. Franceschetti ◽  
L. P. Kouwenhoven ◽  
...  

2001 ◽  
Vol 15 (31) ◽  
pp. 4111-4121 ◽  
Author(s):  
JIN-FU FENG ◽  
SHI-JIE XIONG

We study the transport properties of electrons in a quantum wire with side-coupled quantum dots in Coulomb blockade regime by the use of the equivalent single-particle multi-channel network and Landauer formula. At low temperatures the calculated dependence of the conductance on the gate voltage of dots exhibits two dips, indicating the destructive interference of the wave directly transmitted through the wire and the wave reflected from the dots. In a wire with more than one side-coupled dots the suppression of conductance is a simple summation of the effects of scattering of all the dots. The possibility of fabricating tunable switch devices by using such structures is discussed.


2002 ◽  
Vol 12 (01) ◽  
pp. 15-43 ◽  
Author(s):  
ANDREW J. WILLIAMSON

We describe a procedure for calculating the electronic structure of semiconductor quantum dots containing over one million atoms. The single particle electron levels are calculated by solving a Hamiltonian constructed from screened atomic pseudopotentials. Effects beyond the single particle level such as electron and hole exchange and correlation interactions are described using a configuration interaction (CI) approach. Application of these methods to the calculation of the optical absorption spectrum, Coulomb repulsions and multi-exciton binding energies of InGaAs self-assembled quantum dots are presented.


2007 ◽  
Vol 75 (12) ◽  
Author(s):  
Colin D. Heyes ◽  
Andrei Yu. Kobitski ◽  
Vladimir V. Breus ◽  
G. Ulrich Nienhaus

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