Since copper has some advantages relative to aluminum as an interconnection material, it is appropriate to investigate its mechanical properties in order to be prepared in advance for possible problems, such as the cracks and voids that have plagued aluminum interconnect systems. A model previously used to interpret the behavior of aluminum films proves to be, with minor modification, also applicable to copper. Although the thermal expansion of copper is closer to that of silicon and, consequently, the thermally induced strains are smaller, the much larger elastic modulus of copper results in substantially higher stresses. This has implications for the interaction of copper lines with dielectrics.
TRANSIENT RESPONSE OF A DISTRIBUTED RLC INTERCONNECT BASED ON DIRECT POLE EXTRACTION
