Mesoporous SiO2 as low-k dielectric for integration in Cu/low-k interconnect systems

2006 ◽  
Vol 18 (S1) ◽  
pp. 31-36
Author(s):  
Swantje Frühauf ◽  
Stefan E. Schulz ◽  
Thomas Gessner
Author(s):  
Y.-L. Shen

Systematic finite element analyses are carried out to model the thermomechanical stresses in on-chip copper interconnect systems. Constitutive behavior of encapsulated copper films, determined by experimentally measuring the stress-temperature response during thermal cycling, is used in the model for predicting stresses in copper interconnect/low-k dielectric structures. Various combinations of oxide and polymer-based low-k dielectric schemes are considered. The evolution of stresses and deformation pattern in the dual-damascene copper, barrier layers, and the dielectrics is seen to have direct connections to the structural integrity of contemporary and future-generation devices. In particular, stresses experienced by the thin barrier layers and the mechanically weak low-k dielectrics are critically assessed. A parametric analysis on the influence of low-k material properties is also conducted. Practical implications in reliability issues such as voiding, interface fracture, electromigration and dielectric failure are discussed.


2001 ◽  
Vol 45 (1) ◽  
pp. 59-62 ◽  
Author(s):  
W. Wu ◽  
S.H. Kang ◽  
J.S. Yuan ◽  
A.S. Oates

2006 ◽  
Vol 914 ◽  
Author(s):  
Romano Hoofman ◽  
Roel Daamen ◽  
Viet Nguyenhoang ◽  
Julien Michelon ◽  
Laurent G. Gosset ◽  
...  

AbstractIn this paper, two different air gap integration approaches are discussed in detail. Firstly, air gaps can be created using sacrificial materials, which are selectively removed through a capping layer either by wet- or dry-etching or by thermal decomposition. The second class benefits from the non-conformal deposition of different CVD dielectrics, which creates air gaps for narrow spaced lines. The benefit of air gaps in terms of capacitance reduction in multilevel interconnects is well known, therefore the authors will mainly concentrate on the challenges associated with the introduction of air gaps in interconnect systems. It will be shown that interconnect containing air gaps does not suffer more from reliability challenges than interconnects with porous low-k dielectrics. Therefore, air gaps can be considered as a viable option for the 32nm node and beyond.


Author(s):  
Avril V. Somlyo ◽  
H. Shuman ◽  
A.P. Somlyo

This is a preliminary report of electron probe analysis of rabbit portal-anterior mesenteric vein (PAMV) smooth muscle cryosectioned without fixation or cryoprotection. The instrumentation and method of electron probe quantitation used (1) and our initial results with cardiac (2) and skeletal (3) muscle have been presented elsewhere.In preparations depolarized with high K (K2SO4) solution, significant calcium peaks were detected over the sarcoplasmic reticulum (Fig 1 and 2) and the continuous perinuclear space. In some of the fibers there were also significant (up to 200 mM/kg dry wt) calcium peaks over the mitochondria. However, in smooth muscle that was not depolarized, high mitochondrial Ca was found in fibers that also contained elevated Na and low K (Fig 3). Therefore, the possibility that these Ca-loaded mitochondria are indicative of cell damage remains to be ruled out.


2010 ◽  
Vol 130 (4) ◽  
pp. 319-324
Author(s):  
Kouichiro Mizuno ◽  
Hirotake Sugawara ◽  
Akihiro Murayama
Keyword(s):  

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