Variations of the surface electric field during the passage of the MCC on the example of Tomsk

2021 ◽  
Author(s):  
Maria V. Oglezneva ◽  
Tatyana S. Koshikova ◽  
Petr M. Nagorskiy ◽  
Konstantin N. Pustovalov ◽  
Sergei V. Smirnov
1997 ◽  
Vol 473 ◽  
Author(s):  
Heng-Chih Lin ◽  
Edwin C. Kan ◽  
Toshiaki Yamanaka ◽  
Simon J. Fang ◽  
Kwame N. Eason ◽  
...  

ABSTRACTFor future CMOS GSI technology, Si/SiO2 interface micro-roughness becomes a non-negligible problem. Interface roughness causes fluctuations of the surface normal electric field, which, in turn, change the gate oxide Fowler-Nordheim tunneling behavior. In this research, we used a simple two-spheres model and a three-dimensional Laplace solver to simulate the electric field and the tunneling current in the oxide region. Our results show that both quantities are strong functions of roughness spatial wavelength, associated amplitude, and oxide thickness. We found that RMS roughness itself cannot fully characterize surface roughness and that roughness has a larger effect for thicker oxide in terms of surface electric field and tunneling behavior.


1984 ◽  
Vol 53 (5) ◽  
pp. 493-496 ◽  
Author(s):  
A. D. Wieck ◽  
E. Batke ◽  
D. Heitmann ◽  
J. P. Kotthaus ◽  
E. Bangert

2000 ◽  
Vol 73 (1-3) ◽  
pp. 230-234 ◽  
Author(s):  
M Ichimura ◽  
M Hirano ◽  
A Tada ◽  
E Arai ◽  
H Takamatsu ◽  
...  

2012 ◽  
Author(s):  
Haizhou Ren ◽  
Pengtao Wang ◽  
Haibin Huo ◽  
Mengyan Shen ◽  
Marina Ruths ◽  
...  

1995 ◽  
Vol 189 (1) ◽  
pp. 247-256 ◽  
Author(s):  
Yu. P. Rakovich ◽  
G. P. Yablonskii ◽  
A. A. Gladyshchuk ◽  
A. S. Smal

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