Surface properties modifications obtained on ceramics and metals resulting from excimer laser processing technique

1998 ◽  
Author(s):  
Gines Nicolas ◽  
Michel L. Autric ◽  
Jose L. Ocana
Keyword(s):  
Surface Properties ◽  
Excimer Laser ◽  
Laser Processing ◽  
Processing Technique

Fabrication of Microchip with Embedded Optical Fibers by Excimer Laser Processing Technique

2008 ◽  
Vol 35 (11) ◽  
pp. 1821-1824
Author(s):  
金永龙 Jin Yonglong ◽  
张宇 Zhang Yu ◽  
顾宁 Gu Ning
Keyword(s):  
Excimer Laser ◽  
Optical Fibers ◽  
Laser Processing ◽  
Processing Technique

Surface properties of polyester fabrics induced by excimer laser processing

1997 ◽  
Vol 63 (1-3) ◽  
pp. 524-528 ◽  
Author(s):  
K.S. Lau ◽  
P.W. Chan ◽  
K.W. Yeung ◽  
K. Chan ◽  
W.Z. Gong
Keyword(s):  
Surface Properties ◽  
Excimer Laser ◽  
Laser Processing ◽  
Polyester Fabrics

Recent Progress of Interfering Ultra-fast Laser Processing Technique

2015 ◽  
Vol 135 (9) ◽  
pp. 1080-1084
Author(s):  
Yoshiki Nakata ◽  
Yoshiki Matsuba ◽  
Noriaki Miyanaga
Keyword(s):  
Laser Processing ◽  
Recent Progress ◽  
Processing Technique

Finite element simulation for ultraviolet excimer laser processing of patterned Si/SiGe/Si(100) heterostructures

2010 ◽  
Vol 97 (1) ◽  
pp. 014102 ◽  
Author(s):  
J. C. Conde ◽  
E. Martín ◽  
S. Chiussi ◽  
F. Gontad ◽  
C. Serra ◽  
...  
Keyword(s):  
Finite Element ◽  
Finite Element Simulation ◽  
Excimer Laser ◽  
Laser Processing ◽  
Element Simulation

Excimer Laser Processing of Nodular Iron

1994 ◽  
Vol 9 (3) ◽  
pp. 415-427 ◽  
Author(s):  
A. Fontes ◽  
M. Jeandin ◽  
Olivier Uteza ◽  
Marc Sentis ◽  
Michel Frainais
Keyword(s):  
Excimer Laser ◽  
Laser Processing ◽  
Nodular Iron

Pulsed Excimer Laser Processing of AlN/GaN Thin Films

1996 ◽  
Vol 449 ◽  
Author(s):  
W. S. Wong ◽  
L. F. Schloss ◽  
G.S. Sudhir ◽  
B. P. Linder ◽  
K-M. Yu ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Density ◽  
Excimer Laser ◽  
Laser Processing ◽  
Laser Annealing ◽  
Rutherford Backscattering Spectrometry ◽  
Pulsed Laser ◽  
Emission Peak ◽  
Dopant Activation ◽  
Pulsed Laser Annealing

ABSTRACTA KrF (248 nm) excimer laser with a 38 ns pulse width was used to study pulsed laser annealing of AIN/GaN bi-layers and dopant activation of Mg-implanted GaN thin films. For the AIN/GaN bi-layers, cathodoluminescence (CL) showed an increase in the intensity of the GaN band-edge peak at 3.47 eV after pulsed laser annealing at an energy density of 2000 mJ/cm2. Rutherford backscattering spectrometry of a Mg-implanted A1N (75 nm thick)/GaN (1.0 μm thick) thin-film heterostructure showed a 20% reduction of the 4He+ backscattering yield after laser annealing at an energy density of 400 mJ/cm2. CL measurements revealed a 410 nm emission peak indicating the incorporation of Mg after laser processing.

Effect of pulsed Nd:YAG laser processing parameters on surface properties of polyimide films

2019 ◽  
Vol 361 ◽  
pp. 102-111 ◽  
Author(s):  
Huilong Liu ◽  
Yong Tang ◽  
Yingxi Xie ◽  
Longsheng Lu ◽  
Zhenping Wan ◽  
...  
Keyword(s):  
Surface Properties ◽  
Nd:Yag Laser ◽  
Laser Processing ◽  
Processing Parameters ◽  
Polyimide Films ◽  
Pulsed Nd:Yag Laser

193 nm Excimer laser processing of Si/Ge/Si(100) micropatterns

2016 ◽  
Vol 362 ◽  
pp. 217-220 ◽  
Author(s):  
F. Gontad ◽  
J.C. Conde ◽  
S. Chiussi ◽  
C. Serra ◽  
P. González
Keyword(s):  
Excimer Laser ◽  
Laser Processing ◽  
193 Nm
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