Photoconductivity decay method for determining minority carrier lifetime of p-type HgCdTe

1991 ◽  
Author(s):  
Joseph Reichman
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Photoconductivity Decay ◽  
P Type

Minority Carrier Lifetime Measurements in Specific Epitaxial 4H-SiC Layers by the Microwave Photoconductivity Decay

2009 ◽  
Vol 615-617 ◽  
pp. 295-298 ◽  
Author(s):  
Laurent Ottaviani ◽  
Olivier Palais ◽  
Damien Barakel ◽  
Marcel Pasquinelli
Keyword(s):  
Absorption Spectra ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Optical Excitation ◽  
Minority Carrier Lifetime ◽  
Lifetime Measurements ◽  
Recombination Processes ◽  
Photoconductivity Decay ◽  
P Type ◽  
Non Destructive

We report on measurements of the minority carrier lifetime for different epitaxial 4H-SiC layers by using the microwave photoconductivity decay (µ-PCD) method. This is a non-contacting, non-destructive method very useful for the monitoring of recombination processes in semiconductor material. Distinct samples have been analyzed, giving different lifetime values. Transmittance and absorption spectra have also been carried out. The n-type layers, giving rise to a specific absorption peak near 470 nm, are not sensitive to optical excitation for the used wavelengths, as opposite to p-type layers whose lifetime values depend on thickness and doping.

Correlation of Fe-Rich Defect Centre and Minority Carrier Lifetime in p-Type Multicrystalline Silicon

2013 ◽  
Vol 440 ◽  
pp. 82-87 ◽  
Author(s):  
Mohammad Jahangir Alam ◽  
Mohammad Ziaur Rahman
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Multicrystalline Silicon ◽  
Recombination Lifetime ◽  
Spatially Resolved ◽  
Carrier Recombination ◽  
Negative Role ◽  
P Type ◽  
The Impact

A comparative study has been made to analyze the impact of interstitial iron in minority carrier lifetime of multicrystalline silicon (mc-Si). It is shown that iron plays a negative role and is considered very detrimental for minority carrier recombination lifetime. The analytical results of this study are aligned with the spatially resolved imaging analysis of iron rich mc-Si.

Resistivity dependence of minority carrier lifetime and cell performance in p-type dendritic web silicon ribbon

2001 ◽  
Vol 45 (12) ◽  
pp. 1973-1978 ◽  
Author(s):  
Mohamed Hilali ◽  
Abasifreke Ebong ◽  
Ajeet Rohatgi ◽  
Daniel L Meier
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Cell Performance ◽  
Silicon Ribbon ◽  
P Type

Improved minority carrier lifetime in p-type GaN segments prepared by vacancy-guided redistribution of Mg

2021 ◽  
Vol 119 (18) ◽  
pp. 182106
Author(s):  
K. Shima ◽  
R. Tanaka ◽  
S. Takashima ◽  
K. Ueno ◽  
M. Edo ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
P Type

The effect of oxide precipitates on minority carrier lifetime in p-type silicon

2011 ◽  
Vol 110 (5) ◽  
pp. 053713 ◽  
Author(s):  
J. D. Murphy ◽  
K. Bothe ◽  
M. Olmo ◽  
V. V. Voronkov ◽  
R. J. Falster
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Type Silicon ◽  
P Type

Minority carrier lifetime in p-type gallium phosphide

1972 ◽  
Vol 5 (2) ◽  
pp. 108-116 ◽  
Author(s):  
J.A.W. van der Does de Bye ◽  
A.T. Vink
Keyword(s):  
Gallium Phosphide ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
P Type

High Carrier Lifetime Bulk-Grown 4H-SiC Substrates for Power Applications

2006 ◽  
Vol 911 ◽  
Author(s):  
David Malta ◽  
J.R. Jenny ◽  
V.F. Tsvetkov ◽  
M. Das ◽  
St. G. Müller ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Deep Level ◽  
Minority Carrier Lifetime ◽  
Drift Region ◽  
Disordered Lattice ◽  
High Temperature Anneal ◽  
Decay Times ◽  
Photoconductivity Decay ◽  
High Carrier

AbstractA thermal anneal process has been developed that significantly enhances minority carrier lifetime (MCL) in bulk-grown substrates. Microwave photoconductivity decay (MPCD) measurements on bulk grown substrates subjected to this process have exhibited decay times in excess of 35 μs. Electron Beam Induced Current (EBIC) measurements indicated a minority carrier diffusion length (MCDL) of 65 μm resulting in a calculated MCL of 15 μs, well within the range of that measured by MPCD. Deep level transient spectroscopic (DLTS) analysis of samples subjected to this anneal process indicated that a significant reduction of deep level defects, particularly Z1/2, may account for the significantly enhanced lifetimes. The enhanced lifetime is coincident with a transformation of the original as-grown crystal into a strained or disordered lattice configuration as a result of the high temperature anneal process. PiN diodes were fabricated employing 350 μm thick bulk-grown substrates as the intrinsic drift region and thin p- and n-type epitaxial layers on either face of the substrate to act as the anode and cathode, respectively. Conductivity modulation was achieved in these diodes with a 10x effective carrier concentration increase over the background doping as extracted from the differential on-resistance. Significant stacking fault generation observed during forward operation served as additional evidence of conductivity modulation and underscores the importance of reducing dislocation densities in substrates in order to produce a viable bulk-grown drift layer.

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