Improved minority carrier lifetime in p-type GaN segments prepared by vacancy-guided redistribution of Mg

A comparative study has been made to analyze the impact of interstitial iron in minority carrier lifetime of multicrystalline silicon (mc-Si). It is shown that iron plays a negative role and is considered very detrimental for minority carrier recombination lifetime. The analytical results of this study are aligned with the spatially resolved imaging analysis of iron rich mc-Si.

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Resistivity dependence of minority carrier lifetime and cell performance in p-type dendritic web silicon ribbon

Solid-State Electronics ◽

10.1016/s0038-1101(01)00253-2 ◽

2001 ◽

Vol 45 (12) ◽

pp. 1973-1978 ◽

Cited By ~ 3

Author(s):

Mohamed Hilali ◽

Abasifreke Ebong ◽

Ajeet Rohatgi ◽

Daniel L Meier

Keyword(s):

Carrier Lifetime ◽

Minority Carrier ◽

Minority Carrier Lifetime ◽

Cell Performance ◽

Silicon Ribbon ◽

P Type

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Identification of Cr in p‐type silicon using the minority carrier lifetime measurement by the surface photovoltage method

Applied Physics Letters ◽

10.1063/1.116574 ◽

1996 ◽

Vol 68 (23) ◽

pp. 3281-3283 ◽

Cited By ~ 33

Author(s):

Kamal Mishra

Keyword(s):

Carrier Lifetime ◽

Minority Carrier ◽

Minority Carrier Lifetime ◽

Lifetime Measurement ◽

Surface Photovoltage ◽

Type Silicon ◽

P Type

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The effect of oxide precipitates on minority carrier lifetime in p-type silicon

Journal of Applied Physics ◽

10.1063/1.3632067 ◽

2011 ◽

Vol 110 (5) ◽

pp. 053713 ◽

Cited By ~ 57

Author(s):

J. D. Murphy ◽

K. Bothe ◽

M. Olmo ◽

V. V. Voronkov ◽

R. J. Falster

Keyword(s):

Carrier Lifetime ◽

Minority Carrier ◽

Minority Carrier Lifetime ◽

Type Silicon ◽

P Type

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Minority Carrier Lifetime Measurements in Specific Epitaxial 4H-SiC Layers by the Microwave Photoconductivity Decay

Materials Science Forum ◽

10.4028/www.scientific.net/msf.615-617.295 ◽

2009 ◽

Vol 615-617 ◽

pp. 295-298 ◽

Cited By ~ 2

Author(s):

Laurent Ottaviani ◽

Olivier Palais ◽

Damien Barakel ◽

Marcel Pasquinelli

Keyword(s):

Absorption Spectra ◽

Carrier Lifetime ◽

Minority Carrier ◽

Optical Excitation ◽

Minority Carrier Lifetime ◽

Lifetime Measurements ◽

Recombination Processes ◽

Photoconductivity Decay ◽

P Type ◽

Non Destructive

We report on measurements of the minority carrier lifetime for different epitaxial 4H-SiC layers by using the microwave photoconductivity decay (µ-PCD) method. This is a non-contacting, non-destructive method very useful for the monitoring of recombination processes in semiconductor material. Distinct samples have been analyzed, giving different lifetime values. Transmittance and absorption spectra have also been carried out. The n-type layers, giving rise to a specific absorption peak near 470 nm, are not sensitive to optical excitation for the used wavelengths, as opposite to p-type layers whose lifetime values depend on thickness and doping.

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