Computer modeling of the dynamics of nanosecond laser annealing of amorphous thin silicon layers

1991 ◽  
Author(s):  
Sergei P. Zhvavyi ◽  
Olga L. Sadovskaya
Keyword(s):  
Computer Modeling ◽  
Laser Annealing ◽  
Nanosecond Laser ◽  
Thin Silicon

Heat Transfer and Phase Transformations in Laser Annealing of Thin a-Si Films

2001 ◽  
Author(s):  
Seung-Jae Moon ◽  
Minghong Lee ◽  
Costas P. Grigoropoulos
Keyword(s):  
Laser Annealing ◽  
Thermal Emission ◽  
Electrical Conductance ◽  
Nanosecond Laser ◽  
Solidification Velocity ◽  
Emission Measurement ◽  
Excimer Laser Annealing ◽  
In Situ Experiments ◽  
Si Films

Abstract The liquid-solid interface motion and the temperature history of thin Si films during excimer laser annealing are observed by in situ experiments combining time-resolved (∼lns) thermal emission measurements, optical reflectance and transmittance at near-IR wavelengths and electrical conductance measurements. The spontaneous nucleation temperature in the supercooled liquid melt is studied from the thermal emission measurement A new double laser recrystallization technique using a temporally modulated CW Ar+ laser in conjunction with a superposed nanosecond laser pulse produces lateral grain growth at the irradiated spot. The laser melting process is numerically simulated. High-resolution laser flash photography enabled in-situ direct visualization of the resolidification process. The images reveal lateral solidification velocity of about 10 m/s.

Extended defects in ion-implanted si during nanosecond laser annealing

2014 ◽  
Author(s):  
F. Cristiano ◽  
Y. Qiu ◽  
E. Bedel-Pereira ◽  
K. Huet ◽  
F. Mazzamuto ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Nanosecond Laser ◽  
Extended Defects ◽  
Ion Implanted

Impact of Germanium Concentration on the Ultraviolet Nanosecond Laser Annealing of Intrinsic Si1-xGex Epitaxial Layers

2019 ◽  
Author(s):  
L. Dagault ◽  
S. Kerdilès ◽  
P. Acosta-Alba ◽  
J.-M. Hartmann ◽  
J.-P. Barnes ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Nanosecond Laser ◽  
Epitaxial Layers ◽  
Germanium Concentration

Au-Cluster Redistribution During Nanosecond Laser-Annealing of Metal/Insulator Matrices

1985 ◽  
Vol 51 ◽  
Author(s):  
W. Pamler ◽  
E. E. Marinero ◽  
M. Chen ◽  
V. B. Jipson
Keyword(s):  
Laser Annealing ◽  
Depth Profiling ◽  
Nanosecond Laser ◽  
Laser Interaction ◽  
X Ray Diffraction ◽  
Metal Insulator ◽  
Time Resolved ◽  
Au Clusters ◽  
Excimer Laser Radiation ◽  
Compositional Changes

ABSTRACTWe report on the growth and redistribution of Au clusters caused by nanosecond laser interaction of Aux(TeO2 )1−x thin films with intense excimer laser radiation. This laser-induced phenomenon is studied in a time-resolved manner using transient reflectivity and transmissivity techniques. Structural and compositional changes are investigated using Rutherford Backscattering, XPS depth profiling, x-ray diffraction and conductivity measurements. Our studies indicate that melting of the binary structure initializes segregation, growth and coalescence of Au crystallites in the amorphous TeO2 matrix.

Impact of UV Nanosecond Laser Annealing on Composition and Strain of Undoped Si0.8Ge0.2 Epitaxial Layers

2019 ◽  
Vol 8 (3) ◽  
pp. P202-P208 ◽  
Author(s):  
L. Dagault ◽  
P. Acosta-Alba ◽  
S. Kerdilès ◽  
J. P. Barnes ◽  
J. M. Hartmann ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Nanosecond Laser ◽  
Epitaxial Layers

scholarly journals Simultaneous high crystallinity and sub-bandgap optical absorptance in hyperdoped black silicon using nanosecond laser annealing

2015 ◽  
Vol 118 (22) ◽  
pp. 225303 ◽  
Author(s):  
Benjamin Franta ◽  
David Pastor ◽  
Hemi H. Gandhi ◽  
Paul H. Rekemeyer ◽  
Silvija Gradečak ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Black Silicon ◽  
Nanosecond Laser ◽  
High Crystallinity
Sign in / Sign up

Export Citation Format

Share Document