Radial ion energy measurements in an electron cyclotron resonance reactor

1991 ◽  
Author(s):  
James A. O'Neill ◽  
William M. Holber ◽  
John Caughman
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron ◽  
Ion Energy

Control of ion energy using a screen-grid in an electron cyclotron resonance chemical vapour deposition system

1999 ◽  
Vol 8 (2-5) ◽  
pp. 477-480 ◽  
Author(s):  
E Rusli ◽  
S.F Yoon ◽  
Y.S Wu ◽  
H Yang ◽  
J Ahn ◽  
...  
Keyword(s):  
Chemical Vapour Deposition ◽  
Cyclotron Resonance ◽  
Vapour Deposition ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapour ◽  
Electron Cyclotron ◽  
Ion Energy ◽  
Screen Grid

Influence of mixture compositions on ion energy distributions in Ar/N2 electron cyclotron resonance plasma

Vacuum ◽  
2015 ◽  
Vol 119 ◽  
pp. 174-178 ◽  
Author(s):  
Y.C. Zhang ◽  
X.H. Xie ◽  
H. Li ◽  
K. Yang ◽  
Z.L. Tang ◽  
...  
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron ◽  
Energy Distributions ◽  
Electron Cyclotron Resonance Plasma ◽  
Ion Energy ◽  
Ion Energy Distributions ◽  
Resonance Plasma

Ion energy analysis for sputtering‐type electron‐cyclotron‐resonance microwave plasma

1988 ◽  
Vol 64 (10) ◽  
pp. 5179-5182 ◽  
Author(s):  
Morito Matsuoka ◽  
Ken'ichi Ono
Keyword(s):  
Cyclotron Resonance ◽  
Energy Analysis ◽  
Electron Cyclotron Resonance ◽  
Microwave Plasma ◽  
Electron Cyclotron ◽  
Ion Energy ◽  
Resonance Microwave

Effect of Bias Voltage on the Physical Properties of Hydrogenated Amorphous Carbon Films Grown by Electron Cyclotron Resonance Chemical Vapour Deposition

2006 ◽  
Vol 48 ◽  
pp. 17-23
Author(s):  
J.G. Buijnsters ◽  
M. Camero ◽  
L. Vázquez ◽  
F. Agullo-Rueda ◽  
C. Gómez-Aleixandre ◽  
...  
Keyword(s):  
Chemical Vapour Deposition ◽  
Bias Voltage ◽  
Cyclotron Resonance ◽  
Vapour Deposition ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapour ◽  
Threshold Energy ◽  
Electron Cyclotron ◽  
Wear Testing ◽  
Ion Energy

In the present work, a-C:H films have been grown from argon/methane gas mixtures by Electron Cyclotron Resonance Chemical Vapour Deposition (ECRCVD). The effect of the application of a dc bias voltage to the silicon substrate material on the structural, morphological and mechanical properties of the films has been explored by multiple analysis techniques such as IR and micro-Raman spectroscopy, AFM, nano-indentation and pin-ondisk wear testing. In general, within the range of –300 V to +100 V applied substrate bias we have observed a strong correlation between all measured properties of the grown a-C:H films and the ion energy. Though it is known that the ion energy is one of the crucial parameters in plasma grown films, this work clearly shows that the properties of the a-C:H layers can differ greatly and indicates a threshold energy for the production of hard, low-friction coatings in the order of 80-90 eV. Moreover, this threshold energy is also combined with a sharp transition from rough, cauliflower-like film surfaces towards ultrasmooth, featureless topographies. This correlation suggests that at energies higher than 80 eV the ion bombardment affects simultaneously the surface morphology and the internal bonding structure.

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