Continuous-wave intracavity frequency-doubled Nd:YAG-KNbO3 blue laser at 473 nm

2004 ◽  
Author(s):  
Nicolaie A. Pavel ◽  
Ichiro Shoji ◽  
Jiro Saikawa ◽  
Takunori Taira
Author(s):  
Ji Won Kim ◽  
Jong Hoon Jang ◽  
Choon Sup Yoon ◽  
Keetae Um ◽  
Soyeon Park

2021 ◽  
Vol 42 (11) ◽  
pp. 112801
Author(s):  
Feng Liang ◽  
Degang Zhao ◽  
Zongshun Liu ◽  
Ping Chen ◽  
Jing Yang ◽  
...  

Abstract In this work, we reported the room-temperature continuous-wave operation of 6.0 W GaN-based blue laser diode (LD), and its stimulated emission wavelength is around 442 nm. The GaN-based high power blue LD is grown on a c-plane GaN substrate by metal organic chemical vapor deposition (MOCVD), and the width and length of the ridge waveguide structure are 30 and 1200 μm, respectively. The threshold current is about 400 mA, and corresponding threshold current density is 1.1 kA/cm2.


2020 ◽  
Vol 27 (6) ◽  
pp. 493-497
Author(s):  
Xuchao Liu ◽  
Fengfeng Zhang ◽  
Zhimin Wang ◽  
Nan Zong ◽  
Yong Bo ◽  
...  

2000 ◽  
Vol 5 (S1) ◽  
pp. 1-7 ◽  
Author(s):  
Masayoshi Koike ◽  
Shiro Yamasaki ◽  
Yuta Tezen ◽  
Seiji Nagai ◽  
Sho Iwayama ◽  
...  

GaN-based short wavelength laser diodes are the most promising key device for a digital versatile disk. We have been improving the important points of the laser diodes in terms of optical guiding layers, mirror facets. The continuous wave laser irradiation at room temperature could be achieved successfully by reducing the threshold current to 60 mA (4 kA/cm2). We have tried to apply the multi low temperature buffer layers to the laser diodes for the first time to reduce the crystal defects.


2005 ◽  
Vol 81 (4) ◽  
pp. 517-520 ◽  
Author(s):  
Y. F. Chen ◽  
Y. S. Chen ◽  
T. H. Ou ◽  
K. W. Su

2005 ◽  
Vol 255 (4-6) ◽  
pp. 304-308 ◽  
Author(s):  
Rui Zhou ◽  
Zhiqiang Cai ◽  
Wuqi Wen ◽  
Xin Ding ◽  
Peng Wang ◽  
...  

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