scholarly journals Room Temperature CW Operation of GaN-based Blue Laser Diodes by GaInN/GaN optical guiding layers

2000 ◽  
Vol 5 (S1) ◽  
pp. 1-7 ◽  
Author(s):  
Masayoshi Koike ◽  
Shiro Yamasaki ◽  
Yuta Tezen ◽  
Seiji Nagai ◽  
Sho Iwayama ◽  
...  
Keyword(s):  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Threshold Current ◽  
Crystal Defects ◽  
Blue Laser ◽  
Buffer Layers ◽  
Continuous Wave Laser ◽  
Cw Operation ◽  
First Time

GaN-based short wavelength laser diodes are the most promising key device for a digital versatile disk. We have been improving the important points of the laser diodes in terms of optical guiding layers, mirror facets. The continuous wave laser irradiation at room temperature could be achieved successfully by reducing the threshold current to 60 mA (4 kA/cm2). We have tried to apply the multi low temperature buffer layers to the laser diodes for the first time to reduce the crystal defects.

Room Temperature CW Operation of GaN-Based Blue Laser Diodes by GaInN/GaN Optical Guiding Layers

1999 ◽  
Vol 595 ◽  
Author(s):  
Masayoshi Koike ◽  
Shiro Yamasaki ◽  
Yuta Tezen ◽  
Seiji Nagai ◽  
Sho Iwayama ◽  
...  
Keyword(s):  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Threshold Current ◽  
Crystal Defects ◽  
Blue Laser ◽  
Buffer Layers ◽  
Continuous Wave Laser ◽  
Cw Operation ◽  
First Time

AbstractGaN-based short wavelength laser diodes are the most promising key device for a digital versatile disk. We have been improving the important points of the laser diodes in terms of optical guiding layers, mirror facets. The continuous wave laser irradiation at room temperature could be achieved successfully by reducing the threshold current to 60 mA (4 kA/cm2). We have tried to apply the multi low temperature buffer layers to the laser diodes for the first time to reduce the crystal defects.

scholarly journals Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes

1997 ◽  
Vol 2 ◽  
Author(s):  
Shuji Nakamura
Keyword(s):  
Quantum Well ◽  
Carrier Density ◽  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Gain Coefficient ◽  
Threshold Current ◽  
Quantum Well Structure ◽  
Multi Quantum Well ◽  
Structure Laser

The continuous-wave (CW) operation of InGaN multi-quantum-well-structure laser diodes (LDs) was demonstrated at room temperature (RT) with a lifetime of 35 hours. The threshold current and the voltage of the LDs were 80 mA and 5.5 V, respectively. The threshold current density was 3.6 kA/cm2. When the temperature of the LDs was varied, large mode hopping of the emission wavelength was observed. The carrier lifetime and the threshold carrier density were estimated to be 2-10 ns and 1-2 × 1020/cm3, respectively. From the measurements of gain spectra and an external differential quantum efficiency dependence on the cavity length, the differential gain coefficient, the transparent carrier density, threshold gain and internal loss were estimated to be 5.8×10−17 cm2, 9.3×1019 cm−3, 5200 cm−1 and 43 cm−1, respectively.

GaN-based blue laser diode with 6.0 W of output power under continuous-wave operation at room temperature

2021 ◽  
Vol 42 (11) ◽  
pp. 112801
Author(s):  
Feng Liang ◽  
Degang Zhao ◽  
Zongshun Liu ◽  
Ping Chen ◽  
Jing Yang ◽  
...  
Keyword(s):  
Laser Diode ◽  
Room Temperature ◽  
Continuous Wave ◽  
Chemical Vapor ◽  
Threshold Current ◽  
Stimulated Emission ◽  
Blue Laser ◽  
Organic Chemical ◽  
Blue Laser Diode ◽  
Continuous Wave Operation

Abstract In this work, we reported the room-temperature continuous-wave operation of 6.0 W GaN-based blue laser diode (LD), and its stimulated emission wavelength is around 442 nm. The GaN-based high power blue LD is grown on a c-plane GaN substrate by metal organic chemical vapor deposition (MOCVD), and the width and length of the ridge waveguide structure are 30 and 1200 μm, respectively. The threshold current is about 400 mA, and corresponding threshold current density is 1.1 kA/cm2.

The development of low voltage room temperature continuous wave laser diodes

1995 ◽  
Vol 150 ◽  
pp. 790-796 ◽  
Author(s):  
R.L. Gunshor ◽  
J. Han ◽  
A.V. Nurmikko ◽  
A. Salokatve
Keyword(s):  
Room Temperature ◽  
Continuous Wave ◽  
Low Voltage ◽  
Laser Diodes ◽  
Continuous Wave Laser ◽  
Wave Laser

Blue Lasers Based on II-VI Semiconductor Heterostructures

1992 ◽  
Vol 281 ◽  
Author(s):  
Z. Yu ◽  
J. Ren ◽  
Y. Lansari ◽  
K. J. Gossett ◽  
B. Sneed ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Laser Emission ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Pulsed Laser ◽  
Stimulated Emission ◽  
Blue Laser ◽  
Semiconductor Heterostructures ◽  
Turn On ◽  
Cw Operation

ABSTRACTProperties of blue laser diodes based on ZnSe-related II-VI semiconductor heterostructures are reported. At 77 K, continuous-wave (cw) operation has been achieved for lasers emitting at wavelengths as short as 470.4 nm (2.635 eV), while pulsed laser emission has been observed up to ∼200 K, for samples with uncoated facets. Measured turn-on voltages for stimulated emission at 77 K were as low as 12 V for some of the laser diodes due to improved ohmic contacts. For some particular devices, differential quantum efficiencies as high as 36% per (uncoated) facet have been obtained at 77 K.

Room-Temperature Continuous-Wave Electrically Driven Semipolar (202̅1) Blue Laser Diodes Heteroepitaxially Grown on a Sapphire Substrate

ACS Photonics ◽  
2020 ◽  
Vol 7 (7) ◽  
pp. 1662-1666 ◽  
Author(s):  
Haojun Zhang ◽  
Hongjian Li ◽  
Panpan Li ◽  
Jie Song ◽  
James S. Speck ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Blue Laser

Characteristics of InGaN Multiquantum-Well-Structure Laser Diodes

1996 ◽  
Vol 449 ◽  
Author(s):  
Shuji Nakamura
Keyword(s):  
Continuous Wave ◽  
Near Field ◽  
Laser Diodes ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Longitudinal Modes ◽  
Field Patterns ◽  
Cw Operation ◽  
Half Power ◽  
Structure Laser

ABSTRACTThe continuous-wave (CW) operation of InGaN multi-quantum-well-structure laser diodes (LDs) was demonstrated at room temperature (RT) with a lifetime of 35 hours. The threshold current and the voltage of the LDs were 80 mA and 5.5 V, respectively. The threshold current density was 3.6 kA/cm2. Longitudinal modes with a mode separation of 0.042 nm were observed under CW operation at RT. When the temperature of the LDs was varied, large mode hopping of the emission wavelength was observed. The carrier lifetime and the threshold carrier density were estimated to be 10 ns and 2 × 1020/cm3, respectively. The beam full width at half-power values for the parallel and the perpendicular near-field patterns were 1.6 µm and 0.8 µm, respectively. Those of the far-field patterns were 6.8° and 33.6°, respectively.

545 nm Room-Temperature Continuous-Wave Operation of BeZnCdSe Quantum-Well Green Laser Diodes with Low Threshold Current Density

2010 ◽  
Vol 3 (9) ◽  
pp. 091201 ◽  
Author(s):  
Jun-ichi Kasai ◽  
Ryouichi Akimoto ◽  
Haruhiko Kuwatsuka ◽  
Toshifumi Hasama ◽  
Hiroshi Ishikawa ◽  
...  
Keyword(s):  
Quantum Well ◽  
Current Density ◽  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Threshold Current ◽  
Green Laser ◽  
Threshold Current Density ◽  
Continuous Wave Operation ◽  
Low Threshold
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