Changes of chlorophyll fluorescence emission spectra of different stages and different position rice leaves during progressive senescence

Plants grown in the presence of the herbicides assayed synthesized chlorophylls during growth at low fluence rates. Subsequent irradiation with higher fluence rates of red light induced a strong chlorosis with SAN 6706 being a much stronger herbicide than J 852 or amino-triazole. All herbicides assayed also changed the content and composition of chlorophylls, carotenoids and pigment-protein-complexes of the thylakoid membrane and therefore the pigment excitation and chlorophyll fluorescence emission spectra of the plastid. With increasing herbicide toxicity the main characteristic emission bands at 690 and 730 nm disappeared and new emission bands at 715 (J 852) and 700 nm (SAN 6706) appeared. Such “artificial” membranes with a changed pigment composition were very susceptible to light. Presented data may be taken as evidence, that the lack of photoprotective cyclic carotenoids caused by the specific action of a bleaching herbicide is the primary event that may lead to a disturbed formation of the thylakoid membrane and its destruction by light and oxygen.

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Using violet laser-induced chlorophyll fluorescence emission spectra for crop yield assessment of cowpea (Vigna unguiculata (L) Walp) varieties

Measurement Science and Technology ◽

10.1088/0957-0233/15/7/005 ◽

2004 ◽

Vol 15 (7) ◽

pp. 1255-1265 ◽

Cited By ~ 14

Author(s):

Benjamin Anderson ◽

Paul K Buah-Bassuah ◽

Jonathan P Tetteh

Keyword(s):

Chlorophyll Fluorescence ◽

Crop Yield ◽

Vigna Unguiculata ◽

Fluorescence Emission ◽

Emission Spectra ◽

Fluorescence Emission Spectra

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Optical Properties and Zinc Nitride Thin Films Prepared Using Magnetron Reactive Sputtering

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.940.11 ◽

2014 ◽

Vol 940 ◽

pp. 11-15

Author(s):

Jun Qin Feng ◽

Jun Fang Chen

Keyword(s):

Thin Films ◽

Band Gap ◽

Near Infrared ◽

Fluorescence Emission ◽

Emission Spectra ◽

Sem Images ◽

Fluorescence Emission Spectra ◽

Glass Substrates ◽

Zinc Nitride ◽

Direct Band

Zinc nitride films were deposited by ion sources-assisted magnetron sputtering with the use of Zn target (99.99% purity) on 7059 glass substrates. The films were characterized by XRD, SEM and EDS, the results of which show that the polycrystalline zinc nitride thin film can be grown on the glass substrates, the EDS spectrum confirmed the chemical composition of the films and the SEM images revealed that the zinc nitride thin films have a dense structure. Ultraviolet-visible-near infrared spectrophotometer was used to study the transmittance behaviors of zinc nitride thin films, which calculated the optical band gap by Davis Mott model. The results of the fluorescence emission spectra show the zinc nitride would be a direct band gap semiconductor material.

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Stress and Phase Transformation Phenomena in Oxide Films: Real-Time Spectroscopic Measurements

MRS Proceedings ◽

10.1557/proc-271-319 ◽

1992 ◽

Vol 271 ◽

Cited By ~ 3

Author(s):

Gregory J. Exarhos ◽

Nancy J. Hess

Keyword(s):

Phase Transformation ◽

Applied Pressure ◽

Oxide Films ◽

Fluorescence Emission ◽

Emission Spectra ◽

Film Deposition ◽

Optical Methods ◽

Fluorescence Emission Spectra ◽

Line Intensities ◽

Deposition Parameters

ABSTRACTIn situ optical methods are reviewed for characterization of phase transformation processes and evaluation of residual stress in solution-deposited metastable oxide films. Such low density films most often are deposited as disordered phases making them prone to crystallization and attendant densification when subjected to increased temperature and/or applied pressure. Inherent stress imparted during film deposition and its evolution during the transformation are evaluated from phonon frequency shifts seen in Raman spectra (TiO2) or from changes in the laser-induced fluorescence emission spectra for films containing rare earth (Sm+3:Y3Al5O12) or transition metal (Cr+3 :Al2O3) dopants. The data in combination with measured increases in line intensities intrinsic to the evolving phase are used to follow crystallization processes in thin films. In general, film deposition parameters are found to influence the crystallite ingrowth kinetics and the magnitude of stress and stress relaxation in the film during the transformation. The utility of these methods to probe crystallization phenomena in oxide films will be addressed.

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