An end point detection method based on induced current and an automatic control device for an ion etching system

2008 ◽  
Author(s):  
S. B. Simakin ◽  
G. D. Kuznetsov ◽  
E. A. Mitrofanov
Keyword(s):  
Automatic Control ◽  
Detection Method ◽  
Control Device ◽  
Induced Current ◽  
Ion Etching ◽  
End Point ◽  
End Point Detection ◽  
Point Detection ◽  
Etching System

End-point Detection of Reactive Ion Etching by Plasma Impedance Monitoring

2001 ◽  
Vol 40 (Part 1, No. 3A) ◽  
pp. 1457-1462 ◽  
Author(s):  
Masaaki Kanoh ◽  
Masashi Yamage ◽  
Hiroyuki Takada
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching ◽  
End Point ◽  
Plasma Impedance ◽  
Impedance Monitoring ◽  
End Point Detection ◽  
Point Detection

Signal analysis of the end point detection method based on motor current

2003 ◽  
Vol 66 (1-4) ◽  
pp. 472-479 ◽  
Author(s):  
Sang-Yong Kim ◽  
Chang-Jun Park ◽  
Yong-Jin Seo
Keyword(s):  
Signal Analysis ◽  
Detection Method ◽  
Motor Current ◽  
End Point ◽  
End Point Detection ◽  
Point Detection

Etching of Magnetic Materials Using Ar-CO/NH3 in a Reactive Ion Etching System

2014 ◽  
Vol 900 ◽  
pp. 643-646
Author(s):  
Shang Xian Liu ◽  
Ming Gang Wang ◽  
Yang Xia
Keyword(s):  
Magnetic Materials ◽  
Smooth Surface ◽  
Ion Etching ◽  
Gas Plasma ◽  
Photoresist Mask ◽  
End Point Detection ◽  
Good Uniformity ◽  
Ar Gas ◽  
Point Detection ◽  
Etching System

A new automatic RIE etching system has been developed. Multi-layers of magnetic materials were fabricated using this system. We compared the process of using conventional Ar gas plasma and the process using CO/NH3gas plasma. Then by combining the two processes, we achieved smooth surface and good uniformity with a good selectivity to photoresist mask. And few of corrosions appeared at the sidewall of trench. Additionally, the etching process could stop exactly at the stop layer. The whole processes ran at a chamber without control of temperature, pressure and end point detection.

Novel End-point Detection Method by Monitoring Shear Force Oscillation Frequency for Barrier Metal Polishing in Advanced LSI

2009 ◽  
Vol 1157 ◽  
Author(s):  
Xun Gu ◽  
Takenao Nemoto ◽  
Yasa Adi Sampurno ◽  
Jiang Cheng ◽  
Sian Nie Theng ◽  
...  
Keyword(s):  
Oscillation Frequency ◽  
Shear Force ◽  
Detection Method ◽  
Spectral Amplitude ◽  
Fast Fourier Transformation ◽  
Silicon Dioxide Film ◽  
End Point ◽  
End Point Detection ◽  
Barrier Metal ◽  
Point Detection

AbstractA novel end-point detection method based on a combination of shear force and its spectral amplitude was proposed for barrier metal polishing on copper damascene structures. Under some polishing conditions, the shear force changed significantly with polished substrate. On the other hand, the change in shear force was insignificant under certain polishing conditions. Therefore, a complementary end-point detection method by monitoring oscillation frequency of shear force was proposed. It was found that the shear force fluctuated in unique frequencies depending on polished substrates. Using Fast Fourier Transformation, the shear force data was converted from time domain to frequency domain. The amplitude of spectral frequencies corresponding to the rotational rate of wafer carrier and platen was monitored. Significant frequency amplitude changes were observed before, during and after the polished layer transition from barrier film to silicon dioxide film. The results indicated that a combination of shear force and its spectral amplitude analyses provided effective end-point detection for barrier CMP process.

End Point Detection for Reactive Ion Etching of Aluminum

1984 ◽  
Vol 131 (1) ◽  
pp. 214-215 ◽  
Author(s):  
Kwang O. Park ◽  
Fredrick C. Rock
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching ◽  
End Point ◽  
End Point Detection ◽  
Point Detection
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