Investigation Of Cavitation Bubble Dynamics By High Speed Ruby Laser And Argon Ion Laser Holocinematography

1978 ◽  
Author(s):  
Karl J. Ebeling
1977 ◽  
Vol 13 (10) ◽  
pp. 808-809 ◽  
Author(s):  
M. Birnbaum ◽  
A. Tucker ◽  
C. Fincher

1982 ◽  
Vol 30 (3) ◽  
pp. 75-78 ◽  
Author(s):  
W. Hentschel ◽  
K.-D. Merboldt ◽  
K. J. Ebeling ◽  
W. Lauterborn

A novel technique for the investigation of stimulated scattering in liquid media is described. Bragg reflexion of the light of a continuous argon ion laser has been used to analyse the modulations of dielectric constant generated in liquid media by stimulated scattering of the light of a Q-switched ruby laser. The results obtained indicate that this technique allows a comprehensive investigation of the scattering phenomenon and is particularly suitable for studying the temporal and spatial variations of the modulations.


Author(s):  
Saeed Moghaddam ◽  
Kenneth T. Kiger ◽  
Jean-Marc Henriette ◽  
Michael Ohadi

An array of 44 resistance temperature sensors with a radial resolution of 35 μm was fabricated around a re-entrant cavity (3 μm mouth diameter) on a thin silicon diaphragm with the intended purpose of obtaining highly resolved spatial and temporal measurements of the wall surface temperature during the boiling process. An Argon ion laser beam was used to provide a constant net flux of thermal energy to the backside of the diaphragm underneath the cavity and sensor area. This microsystem initiates and grows a single bubble at the center of the radial sensor array; all while the temperature variation underneath the bubble region during growth, departure, and rewetting is being measured with a frequency of 10 kHz. A high-speed CCD camera capable of taking over 3700 pictures per second is used to monitor the growth rate and departure process of the bubble from the surface, and correlated with the surface temperature measurement. The resulting temperature data can then be used to calculate the variation of the heat transfer coefficient under the bubble during the process of growth, departure, and rewetting. This experimental study provided unique experimental data to evaluate varieties of theories and speculations about the dynamics of bubbling at a microscale level. The focus of the current paper is on the details of the apparatus development and fabrication.


Cytometry ◽  
1995 ◽  
Vol 19 (3) ◽  
pp. 209-216 ◽  
Author(s):  
Jan F. Keij ◽  
Ad C. Groenewegen ◽  
George B. J. Dubelaar ◽  
Jan W. M. Visser

1968 ◽  
Vol 4 (5) ◽  
pp. 392-392
Author(s):  
M. Birnbaum ◽  
C. Fincher

1983 ◽  
Vol 29 ◽  
Author(s):  
A. Wayne Johnson ◽  
Gary C. Tisone

ABSTRACTGallium phosphide is an important III-V semiconductor material for fabricating strained layer superlattices and high-speed and high-temperature microelectronics. Etching of this compound semiconductor with conventional techniques presents problems which may be solved by photon-induced electro-chemistry. We have shown that rapid localized etching of n-GaP in KOH can be driven with the UV lines of an argon-ion laser. The level and type of doping and the laser intensity determine the etch rates, which are nearly 60 nm/sec at 3500 Wcm−2 for n-doped material.


1968 ◽  
Vol 12 (7) ◽  
pp. 225-227 ◽  
Author(s):  
Milton Birnbaum ◽  
Curtis L. Fincher

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