Using nested sampling with Galilean Monte Carlo for model comparison problems in acoustics

2013 ◽  
Vol 133 (5) ◽  
pp. 3575-3575
Author(s):  
Paul Goggans ◽  
Wesley Henderson ◽  
Ning Xiang
Keyword(s):  
Monte Carlo ◽  
Model Comparison ◽  
Nested Sampling

Combined-chain nested sampling for efficient Bayesian model comparison

2017 ◽  
Vol 70 ◽  
pp. 84-93 ◽  
Author(s):  
R. Wesley Henderson ◽  
Paul M. Goggans ◽  
Lei Cao
Keyword(s):  
Bayesian Model ◽  
Model Comparison ◽  
Nested Sampling ◽  
Bayesian Model Comparison

scholarly journals Bayesian model comparison in cosmology with Population Monte Carlo

2010 ◽  
Author(s):  
Martin Kilbinger ◽  
Darren Wraith ◽  
Christian P. Robert ◽  
Karim Benabed ◽  
Olivier Cappé ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Bayesian Model ◽  
Model Comparison ◽  
Population Monte Carlo ◽  
Bayesian Model Comparison

scholarly journals Ensemble Monte Carlo Study of Electron Transport in Bulk Indium Nitride

1999 ◽  
Vol 4 (S1) ◽  
pp. 781-786
Author(s):  
E. Bellotti ◽  
B. Doshi ◽  
K. F. Brennan ◽  
P. P. Ruden
Keyword(s):  
Monte Carlo ◽  
Electron Transport ◽  
Model Comparison ◽  
Phonon Scattering ◽  
Impact Ionization ◽  
Indium Nitride ◽  
Monte Carlo Model ◽  
Breakdown Field ◽  
Ensemble Monte Carlo ◽  
Full Band

Ensemble Monte Carlo calculations of electron transport at high applied electric field strengths in bulk, wurtzite phase InN are presented. The calculations are performed using a full band Monte Carlo simulation that includes a pseudopotential band structure, all of the relevant phonon scattering agents, and numerically derived impact ionization transition rates. The full details of the first five conduction bands, which extend in energy to about 8 eV above the conduction band minimum, are included in the simulation. The electron initiated impact ionization coefficients and quantum yield are calculated using the full band Monte Carlo model. Comparison is made to previous calculations for bulk GaN and ZnS. It is found that owing to the narrower band gap in InN, a lower breakdown field exists than in either GaN or ZnS.

Ensemble Monte Carlo Study of Electron Transport in Bulk Indium Nitride

1998 ◽  
Vol 537 ◽  
Author(s):  
E. Bellotti ◽  
B. Doshi ◽  
K. F. Brennan ◽  
P. P. Ruden
Keyword(s):  
Monte Carlo ◽  
Electron Transport ◽  
Model Comparison ◽  
Phonon Scattering ◽  
Impact Ionization ◽  
Indium Nitride ◽  
Monte Carlo Model ◽  
Breakdown Field ◽  
Ensemble Monte Carlo ◽  
Full Band

AbstractEnsemble Monte Carlo calculations of electron transport at high applied electric field strengths in bulk, wurtzite phase InN are presented. The calculations are performed using a full band Monte Carlo simulation that includes a pseudopotential band structure, all of the relevant phonon scattering agents, and numerically derived impact ionization transition rates. The full details of the first five conduction bands, which extend in energy to about 8 eV above the conduction band minimum, are included in the simulation. The electron initiated impact ionization coefficients and quantum yield are calculated using the full band Monte Carlo model. Comparison is made to previous calculations for bulk GaN and ZnS. It is found that owing to the narrower band gap in InN, a lower breakdown field exists than in either GaN or ZnS.

Sign in / Sign up

Export Citation Format

Share Document