Ensemble Monte Carlo Study of Electron Transport in Bulk Indium Nitride

Ensemble Monte Carlo calculations of electron transport at high applied electric field strengths in bulk, wurtzite phase InN are presented. The calculations are performed using a full band Monte Carlo simulation that includes a pseudopotential band structure, all of the relevant phonon scattering agents, and numerically derived impact ionization transition rates. The full details of the first five conduction bands, which extend in energy to about 8 eV above the conduction band minimum, are included in the simulation. The electron initiated impact ionization coefficients and quantum yield are calculated using the full band Monte Carlo model. Comparison is made to previous calculations for bulk GaN and ZnS. It is found that owing to the narrower band gap in InN, a lower breakdown field exists than in either GaN or ZnS.

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Ensemble Monte Carlo Study of Electron Transport in Bulk Indium Nitride

MRS Proceedings ◽

10.1557/proc-537-g6.59 ◽

1998 ◽

Vol 537 ◽

Author(s):

E. Bellotti ◽

B. Doshi ◽

K. F. Brennan ◽

P. P. Ruden

Keyword(s):

Monte Carlo ◽

Electron Transport ◽

Model Comparison ◽

Phonon Scattering ◽

Impact Ionization ◽

Indium Nitride ◽

Monte Carlo Model ◽

Breakdown Field ◽

Ensemble Monte Carlo ◽

Full Band

AbstractEnsemble Monte Carlo calculations of electron transport at high applied electric field strengths in bulk, wurtzite phase InN are presented. The calculations are performed using a full band Monte Carlo simulation that includes a pseudopotential band structure, all of the relevant phonon scattering agents, and numerically derived impact ionization transition rates. The full details of the first five conduction bands, which extend in energy to about 8 eV above the conduction band minimum, are included in the simulation. The electron initiated impact ionization coefficients and quantum yield are calculated using the full band Monte Carlo model. Comparison is made to previous calculations for bulk GaN and ZnS. It is found that owing to the narrower band gap in InN, a lower breakdown field exists than in either GaN or ZnS.

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Monte Carlo Based Calculation of Transport Parameters for Wide Band Gap Device Simulation

MRS Proceedings ◽

10.1557/proc-622-t6.24.1 ◽

2000 ◽

Vol 622 ◽

Cited By ~ 1

Author(s):

E. Bellotti ◽

M. Farahmand ◽

H.-E Nilsson ◽

K. F. Brennan ◽

P. P. Ruden

Keyword(s):

Monte Carlo ◽

Phonon Scattering ◽

Impact Ionization ◽

Monte Carlo Model ◽

Wide Band ◽

Transport Parameters ◽

Wide Band Gap ◽

Wurtzite Phase ◽

Ensemble Monte Carlo ◽

Ionization Coefficients

ABSTRACTWe present Monte Carlo based calculations of transport parameters useful in the simulation of III-nitride and SiC based devices. The calculations are performed using a full band ensemble Monte Carlo model that includes numerical formulations of the phonon scattering rates and impact ionization transition rates. Calculations are made for the wurtzite and zincblende phases of GaN, the wurtzite phase of InN, and the 3C (cubic) and 4H phases of SiC. The basic transport parameters determined are saturation drift velocity, and the ionization coefficients as a function of applied electric field. Results from the various materials are finally compared.

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Full-band Monte Carlo model with screened pseudopotential based phonon scattering rates for a lattice with basis

Journal of Applied Physics ◽

10.1063/1.1510948 ◽

2002 ◽

Vol 92 (9) ◽

pp. 5359-5370 ◽

Cited By ~ 8

Author(s):

Phuong Hoa Nguyen ◽

Karl R. Hofmann ◽

Gernot Paasch

Keyword(s):

Monte Carlo ◽

Phonon Scattering ◽

Monte Carlo Model ◽

Full Band ◽

Scattering Rates

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Full-band Monte Carlo model of electron and hole transport in strained Si including inelastic acoustic phonon scattering

Applied Physics Letters ◽

10.1063/1.123795 ◽

1999 ◽

Vol 74 (15) ◽

pp. 2185-2187 ◽

Cited By ~ 12

Author(s):

Björn Fischer ◽

Karl R. Hofmann

Keyword(s):

Monte Carlo ◽

Acoustic Phonon ◽

Phonon Scattering ◽

Monte Carlo Model ◽

Hole Transport ◽

Strained Si ◽

Full Band

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Theory of high field carrier transport and impact ionization in wurtzite GaN. Part I: A full band Monte Carlo model

Journal of Applied Physics ◽

10.1063/1.3213363 ◽

2009 ◽

Vol 106 (6) ◽

pp. 063718 ◽

Cited By ~ 71

Author(s):

Francesco Bertazzi ◽

Michele Moresco ◽

Enrico Bellotti

Keyword(s):

Monte Carlo ◽

High Field ◽

Carrier Transport ◽

Impact Ionization ◽

Monte Carlo Model ◽

Full Band

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Theoretical Study of Electron Initiated Impact Ionization Rate in Bulk GaN using a Wave Vector Dependent Numerical Transition Rate Formulation

MRS Proceedings ◽

10.1557/proc-395-733 ◽

1995 ◽

Vol 395 ◽

Author(s):

J. Kolnik ◽

I.H. Oguzman ◽

K.F. Brennan ◽

R. Wang ◽

P.P. Ruden

Keyword(s):

Monte Carlo ◽

Transition Rate ◽

Phonon Scattering ◽

Impact Ionization ◽

Golden Rule ◽

Ionization Rate ◽

Ensemble Monte Carlo ◽

Bulk Gan ◽

Impact Ionization Rate ◽

The Impact

ABSTRACTIn this paper, we present ensemble Monte Carlo based calculations of electron initiated impact ionization in bulk zincblende GaN using a wavevector dependent formulation of the interband impact ionization transition rate. These are the first reported estimates, either theoretical or experimental, of the impact ionization rates in GaN. The transition rate is determined from Fermi’s golden rule for a two-body screened Coulomb interaction using a numerically determined dielectric function as well as by numerically integrating over all of the possible final states. The Monte Carlo simulator includes the full details of the first four conduction bands derived from an empirical pseudopotential calculation as well as all of the relevant phonon scattering mechanisms. It is found that the ionization rate has a relatively "soft" threshold.

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