Cavityless optical bistability in a thin semiconductor film upon the resonant excitation of excitons and biexcitons

1998 ◽  
Vol 40 (5) ◽  
pp. 858-859 ◽  
Author(s):  
P. I. Khadzhi ◽  
S. L. Gaivan
Keyword(s):  
Optical Bistability ◽  
Resonant Excitation ◽  
Semiconductor Film ◽  
Thin Semiconductor ◽  
Thin Semiconductor Film

OPTICAL BISTABILITY AND TRANSVERSE INHOMOGENITIES IN DIFFUSIVE SYSTEMS WITH INDUCED ABSORPTION

1994 ◽  
Vol 03 (01) ◽  
pp. 1-18 ◽  
Author(s):  
D. BURAK ◽  
J. GROHS ◽  
H. IßLER ◽  
C. KLINGSHIRN
Keyword(s):  
Optical Bistability ◽  
Analytical Approximation ◽  
Critical Parameters ◽  
Semiconductor Film ◽  
Nonlinear Boundary Value Problems ◽  
Conductivity Equation ◽  
Systematic Analysis ◽  
Slowing Down ◽  
Thin Semiconductor ◽  
Thin Semiconductor Film

In this contribution the systematic analysis of the steady-state absorptive optical bistability in a thin semiconductor film is given. The heat-conductivity equation with corresponding two-point boundary conditions is solved numerically and the analytical approximation of the switching intensity is given based on the theorem about lower bounds for critical parameters in nonlinear boundary-value problems. The influences of diffusion and of spatial inhomogenities of the excitation profiles in the sample on the input-output characteristic are analyzed in detail. The transverse nonuniformity of the system leads to a condition for the existence of bistability that differs significantly from the well known case of a spatially homogeneous excitation of the medium. The critical slowing down phenomenon is discussed analytically and compared to previous experimental results.

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