Система локализованных экситонов на кислородных комплексах в CdS

Intense CdS luminescence in the blue and green spectral regions is widely used in all areas of optoelectronics. In this spectrum band are working on lasers CdS. This paper presents the results of a study of the exciton region of the CdS spectrum based on the theory of anti-intersecting bands (bands anticrossing theory - BAC) with the involvement of broader initial data for the analysis of optical properties. Depending on the growth conditions of CdS, the presence and change in the oxygen concentration, as well as the equilibrium of intrinsic point defects, which determines the change in the composition of the crystals. The concept of the nonuniform distribution of isoelectronic centers in the bulk of CdS due to their predominant segregation on compensating stacking faults is introduced. Cathodoluminescence (CL) spectra were studied using various recording methods, excitation intensity and temperature, as well as pulsed CL at high excitation intensities. In a scanning electron microscope from local registration and a high excitation density, the emission of the edge luminescence components of CdS was detected at 300 K To analyze the optical data, we used the capabilities of the method for constructing band models based on the BAC theory, which. collects extensive and multilateral information about specific samples. A model of a CdS O multizone with stacking faults is presented, which determines the spectrum of edge emission. An explanation of the nature of the green edge emission of cadmium sulfide as excitons localized on oxygen-containing complexes in SF layers has been obtained for the first time. It was found that the system of levels of localized excitons at stacking faults does not change either with temperature up to 300 K, or with a change in the oxygen solubility in the crystal to the limiting one. It is shown that the presence of isoelectronic oxygen centers appear itself in the electro-physical properties of crystals. Recommendations are given for the diagnostics of crystals suitable for the creation of luminescent systems or lasers that are stable in operation.

Природа аномальной красной люминесценции в нелинейно-оптических кристаллах K-=SUB=-2-=/SUB=-Al-=SUB=-2-=/SUB=-B-=SUB=-2-=/SUB=-O-=SUB=-7-=/SUB=- : Fe

In this work, the spectra of anomalously intense luminescence at 1.675 eV (FWHM= 0.173 eV) in wide-gap (180–3600 nm) nonlinear-optical crystals K2Al2B2O7 were observed experimentally for the first time upon excitation in the spectral region of 4–5 harmonics of the fundamental frequency of the Nd3+ radiation. Using low-temperature (7–293 K) luminescence-optical spectroscopy with selective excitation by synchrotron radiation, it was shown that red luminescence occurs at intracenter 4T1(4G)→ 6A1(6S) transitions in impurity Fe3+ ions with a concentration less than 2 ppm. The high excitation efficiency in the exciton region is due to the partial overlapping of the fundamental absorption edge of the crystal, where mobile excitons are excited, and the broad absorption band with O– Fe charge transfer with a maximum at 6.5 eV. The spectrum and temperature dependence of the luminescence are due to the superposition of two types of luminescence centers (activation energies 9 and 20 meV) based on Fe3+ impurity ions located in regular Al3+ positions of two nonequivalent Al2O7 clusters.

SELF-TRAPPED EXCITONS IN ORTHORHOMBIC SnBr2

Luminescence properties of SnBr 2 have been studied to reveal the photo-excited exciton relaxation process. Two types of luminescence with large Stokes shifts are found at low temperatures; the 2.2-eV luminescence band produced under the photo-excitation in the first exciton region, and the 2.5-eV luminescence band stimulated by photons with energies above the bandgap. The time-resolved photoluminescence measurements have revealed that the 2.2-eV luminescence comprises fast (1.2 μs) and slow (6.4 μs) exponential decay components, whereas the 2.5-eV luminescence shows the time dependence of I(t)∞ t-0.9. These results suggest that the former band is attributed to the radiative decay of self-trapped excitons, and the latter band would originate from tunneling recombination of holes with the STEL as in the case of lead halides.

Luminescence Of A New Material: GaN Grown On NdGaO3

It is shown that heteroepitaxial GaN layers grown on NdGaO3, in spite of a very high conductivity (˜ 10 Ω−1cm−1) have very efficient luminescence properties. It is shown that a high electrical conductivity is caused by contamination of GaN layers with oxygen. Efficient emission due to donor bound excitons (at hv = 3.475 eV), free excitons and free electron – hole recombination have been identified. The total PL emission in the exciton region exceeds the intensity from the homoepitaxial GaN layers. It is argued that a high oxygen concentration eliminates nonradiative channels connected with point defects, leading to efficient radiative recombination.

Influence Of Ti Related Centers On ZnSe Radiation Spectra

ZnSe annealed in (Zn + 46 wt.% TI) vapors and in Zn melt with 5 wt.% TI addition was investigated. The radiation spectra in the regimes of stationary and pulsed photoluminescence (PL) with the time delaying at 77K were studied. By using coloured cathodoluminescence (CCL) combined with the crystal cleavage image in the secondary electrons reflection the impurities and defects volume distribution was evaluated. It was revealed that at the annealing of ZnSe crystals in TI vapors, the cleavage surface has light blue radiation on the red background with an homogeneous field distribution with the dimensions ˜ 1..10μm. On the edge of the cleavage on the depth of 10μm the region of yellow radiation is observed. At the annealing in the melt the irradiation became blue on a weak red background, the homogeneity enhances. At the room temperature PL spectra correspond with images of cleavage in CCL. In the PL (at 77K) spectra in the exciton region there were observed: bands at 445nm (blue radiation); edge radiation at 460nm, 485nm with the LO phonons replica (blue region) and in the impurity region: bands 500...570nm (yellow-green radiation); 600...700nm and 720...800nm (red radiation). The investigation of PL of the annealed samples surface allowed the suppose, that the bands at 2,76eV (450nm), are stipulated by the free-bound transition on the acceptor center (E + 40meV), including TI.The comparison of ion and tetrahedronical covalent radiuses of Zn, Se and TI, electronegativity, probability of Zni and Vse. formation at the annealing allowed to suppose that, TI fills Vse. and forms (Zni Tls) and (Vse. Tlse) complexes. The carried out theoretical calculations according to the model of two-atom molecule gives the energy of complexes occurrence (Ev + 0,04) eV and (Ev + 0,8) eV. The first value accordingly is in good agreement with the experimental data.