A new bound-exciton emission band in ZnSe crystals and multiplasmon optical transitions

1999 ◽  
Vol 41 (7) ◽  
pp. 1070-1074
Author(s):  
V. S. Vavilov ◽  
M. V. Chukichev ◽  
R. R. Rezvanov ◽  
A. A. Klyukanov ◽  
K. D. Sushkevich ◽  
...  
Keyword(s):  
Emission Band ◽  
Optical Transitions ◽  
Exciton Emission

scholarly journals Free and self-trapped exciton emission in perovskite CsPbBr3 microcrystals

RSC Advances ◽  
2022 ◽  
Vol 12 (2) ◽  
pp. 1035-1042
Author(s):  
Fang Pan ◽  
Jinrui Li ◽  
Xiaoman Ma ◽  
Yang Nie ◽  
Beichen Liu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Emission Band ◽  
Exciton Emission ◽  
Cvd Method

A broad STE emission band together with a FE emission was found at low temperature in a CsPbBr3 microcrystal sample prepared by CVD method.

Photoluminescence transient-decay study of the deep-donor bound-exciton-emission band in high-purity InP

1996 ◽  
Vol 53 (7) ◽  
pp. 3627-3629 ◽  
Author(s):  
R. Benzaquen ◽  
S. Charbonneau ◽  
R. Leonelli ◽  
A. P. Roth
Keyword(s):  
High Purity ◽  
Emission Band ◽  
Exciton Emission ◽  
Decay Study ◽  
Deep Donor

OPTICAL TRANSITIONS BETWEEN SPIN-POLARIZED BANDS IN MAGNETIC CHROMIUM SPINELS

1971 ◽  
Vol 32 (C1) ◽  
pp. C1-932-C1-933 ◽  
Author(s):  
H. W. LEHMANN ◽  
G. HARBEKE ◽  
H. PINCH
Keyword(s):  
Optical Transitions ◽  
Spin Polarized

VOLUME DEPENDENCE OF OPTICAL TRANSITIONS IN GaAs : PHOTOMODULATED REFLECTIVITY

1984 ◽  
Vol 45 (C8) ◽  
pp. C8-57-C8-60 ◽  
Author(s):  
M. Hanfland ◽  
K. Syassen ◽  
N. E. Christensen
Keyword(s):  
Optical Transitions ◽  
Volume Dependence

Highly thermally stable Cr3+ and Yb3+ codoped Gd2GaSbO7 phosphors for broadband near-infrared applications

2021 ◽  
Author(s):  
xiudi wu ◽  
shuang zhao ◽  
Liang Zhang ◽  
Langping Dong ◽  
Yonghui Xu ◽  
...  
Keyword(s):  
Solid State ◽  
Solid State Reaction ◽  
Emission Band ◽  
Near Infrared ◽  
Thermally Stable ◽  
Nir Emission

Abstract：Gd2GaSbO7:Cr3+,Yb3+ phosphors with efficient broadband NIR emission were prepared by solid-state reaction. Under the excitation of 448 nm, Gd2GaSbO7:Cr3+ (GGS:Cr3+) phosphor exhibits a broadband NIR emission band centered at approximately...

High Pressure Studies of Quantum Well Emission and Deep Emission in GaInP(ordered)-GaAs Heterostructures

1997 ◽  
Vol 499 ◽  
Author(s):  
S. H. Kwok ◽  
P. Y. Yu ◽  
K. Uchida ◽  
T. Arai
Keyword(s):  
High Pressure ◽  
Quantum Well ◽  
Emission Band ◽  
Excitation Power ◽  
High Excitation ◽  
High Pressure Studies ◽  
Band Alignments ◽  
High Pressure Study

ABSTRACTWe report on a high pressure study of emission from a series of GaInP(ordered)/GaAs heterostructures. A so-called “deep emission” band at 1.46 eV is observed in all our samples. At high excitation power, quantum well emission emerges in only one structure where thin GaP layers are inserted on both sides of the GaAs well. From the pressure dependent emission in this sample we have determined its band alignments. The role of the GaP layers in suppressing the deep emission is elucidated.

Sign in / Sign up

Export Citation Format

Share Document