Influence of prolonged operation at the maximum current load on the characteristics of silicon carbide light-emitting diodes operating in an electrical breakdown regime

1997 ◽  
Vol 42 (1) ◽  
pp. 115-117
Author(s):  
M. V. Belous ◽  
A. M. Genkin ◽  
V. K. Genkina ◽  
S. A. Stankevich
Keyword(s):  
Silicon Carbide ◽  
Light Emitting Diodes ◽  
Electrical Breakdown ◽  
Current Load ◽  
Light Emitting ◽  
Prolonged Operation ◽  
Maximum Current

scholarly journals Bright single photon sources in lateral silicon carbide light emitting diodes

2018 ◽  
Vol 112 (23) ◽  
pp. 231103 ◽  
Author(s):  
Matthias Widmann ◽  
Matthias Niethammer ◽  
Takahiro Makino ◽  
Torsten Rendler ◽  
Stefan Lasse ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Light Emitting Diodes ◽  
Single Photon ◽  
Light Emitting ◽  
Photon Sources

Effect of Li2O/Al Cathode in Alq3 Based Organic Light-Emitting Diodes

2008 ◽  
Vol 8 (9) ◽  
pp. 4684-4687 ◽  
Author(s):  
Eun Chul Shin ◽  
Hui Chul Ahn ◽  
Wone Keun Han ◽  
Tae Wan Kim ◽  
Won Jae Lee ◽  
...  
Keyword(s):  
Power Efficiency ◽  
Light Emitting Diodes ◽  
Organic Light Emitting Diodes ◽  
Light Emitting ◽  
Turn On ◽  
Organic Light ◽  
Maximum Current ◽  
The One ◽  
Luminance Efficiency ◽  
A Current

An effect of bilayer cathode Li2O/Al was studied in Alq3 based organic light-emitting diodes with a variation of Li2O layer thickness. The current-luminance-voltage characteristics of ITO/TPD/Alq3/Li2O/Al device were measured at ambient condition to investigate the effect of Li2O/Al. It was found that when the thickness of Li2O layer is in the range of 0.5∼1 nm, there are improvements in luminance, efficiency, and turn-on voltage of the device. A current density and a luminance are increased by about 100 times, a turn-on voltage is lowered from 6 V to 3 V, a maximum current efficiency is improved by a factor of 2.3, and a maximum power efficiency is improved by a factor of 3.2 for a device with a use of thin Li2O layer compared to those of the one without the Li2O layer. These improvements are thought to be due to a lowering of electron-barrier height for electron injection from the cathode to the emissive layer.

Milliwatt Power Deep Ultraviolet Light Emitting Diodes Grown on Silicon Carbide

2005 ◽  
Vol 44 (No. 17) ◽  
pp. L502-L504 ◽  
Author(s):  
Craig G. Moe ◽  
Hisashi Masui ◽  
Mathew C. Schmidt ◽  
Likun Shen ◽  
Brendan Moran ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Deep Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

Current Transport Mechanisms in Zinc Oxide/Silicon Carbide Heterojunction Light‐Emitting Diodes

2020 ◽  
Vol 257 (9) ◽  
pp. 2000133
Author(s):  
Ewa Przezdziecka ◽  
Sergij Chusnutdinow ◽  
Aleksandra Wierzbicka ◽  
Marek Guziewicz ◽  
Sławomir Prucnal ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Zinc Oxide ◽  
Light Emitting Diodes ◽  
Current Transport ◽  
Transport Mechanisms ◽  
Light Emitting

scholarly journals Highly efficient non-doped blue organic light emitting diodes based on a D–π–A chromophore with different donor moieties

RSC Advances ◽  
2017 ◽  
Vol 7 (22) ◽  
pp. 13604-13614 ◽  
Author(s):  
Venugopal Thanikachalam ◽  
Palanivel Jeeva ◽  
Jayaraman Jayabharathi
Keyword(s):  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Blue Emission ◽  
Organic Light Emitting Diodes ◽  
Light Emitting ◽  
Highly Efficient ◽  
Organic Light ◽  
Maximum Current

The non-doped OLED based on MPPIS-Cz exhibits blue emission with CIE of (0.16, 0.08), maximum current and external quantum efficiency of 1.52 cd A−1 and of 1.42%, respectively.

scholarly journals Improved Efficiency of Perovskite Light-Emitting Diodes Using a Three-Step Spin-Coated CH3NH3PbBr3 Emitter and a PEDOT:PSS/MoO3-Ammonia Composite Hole Transport Layer

Micromachines ◽  
2019 ◽  
Vol 10 (7) ◽  
pp. 459 ◽  
Author(s):  
Yuanming Zhou ◽  
Sijiong Mei ◽  
Dongwei Sun ◽  
Neng Liu ◽  
Wuxing Shi ◽  
...  
Keyword(s):  
Current Efficiency ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Control Device ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Injection ◽  
Maximum Luminance ◽  
Light Emitting ◽  
Maximum Current

High efficiency perovskite light-emitting diodes (PeLEDs) using PEDOT:PSS/MoO3-ammonia composite hole transport layers (HTLs) with different MoO3-ammonia ratios were prepared and characterized. For PeLEDs with one-step spin-coated CH3NH3PbBr3 emitter, an optimal MoO3-ammonia volume ratio (0.02) in PEDOT:PSS/MoO3-ammonia composite HTL presented a maximum luminance of 1082 cd/m2 and maximum current efficiency of 0.7 cd/A, which are 82% and 94% higher than those of the control device using pure PEDOT:PSS HTL respectively. It can be explained by that the optimized amount of MoO3-ammonia in the composite HTLs cannot only facilitate hole injection into CH3NH3PbBr3 through reducing the contact barrier, but also suppress the exciton quenching at the HTL/CH3NH3PbBr3 interface. Three-step spin coating method was further used to obtain uniform and dense CH3NH3PbBr3 films, which lead to a maximum luminance of 5044 cd/m2 and maximum current efficiency of 3.12 cd/A, showing enhancement of 750% and 767% compared with the control device respectively. The significantly improved efficiency of PeLEDs using three-step spin-coated CH3NH3PbBr3 film and an optimum PEDOT:PSS/MoO3-ammonia composite HTL can be explained by the enhanced carrier recombination through better hole injection and film morphology optimization, as well as the reduced exciton quenching at HTL/CH3NH3PbBr3 interface. These results present a promising strategy for the device engineering of high efficiency PeLEDs.

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