Hole conduction in zinc selenide crystals doped with elements of group V from the vapor phase

2000 ◽  
Vol 26 (1) ◽  
pp. 6-7
Author(s):  
V. P. Makhnii ◽  
M. M. Sletov ◽  
Yu. Ya. Chaban
Keyword(s):  
Zinc Selenide ◽  
Vapor Phase ◽  
Group V ◽  
Hole Conduction

"PURIFICATION EFFECTS" IN ZINC SELENIDE CRYSTALS DOPED WITH YTTERBIUM FROM VAPOR PHASE

2016 ◽  
Vol 75 (3) ◽  
pp. 279-284 ◽  
Author(s):  
V. P. Makhniy ◽  
O. V. Kinzersky ◽  
I. M. Senko
Keyword(s):  
Zinc Selenide ◽  
Vapor Phase

Optimization of Reactor Geometry and Growth Conditions for GaN Halide Vapor Phase Epitaxy

1996 ◽  
Vol 423 ◽  
Author(s):  
S. A. Safvi ◽  
N. R. Perkins ◽  
M. N. Horton ◽  
A. Thon ◽  
D. Zhi ◽  
...  
Keyword(s):  
Numerical Model ◽  
Vapor Phase ◽  
Growth Rates ◽  
Ammonia Concentration ◽  
Growth Conditions ◽  
Vapor Phase Epitaxy ◽  
Operating Conditions ◽  
Crystal Quality ◽  
Group V ◽  
Reactor Geometry

AbstractA numerical model of an experimental gallium nitride horizontal vapor phase epitaxy reactor is presented. The model predicts the flow, concentration profiles, and growth rates. The effects of flowrate variation and geometry on the growth rate, growth uniformity and crystal quality were investigated. Numerical model predictions are compared to experimentally observed values. Parasitic gas phase reactions between group III and group V sources and deposition of material on the wall are shown to lead to reduced overall growth rates and inferior crystal quality. A low ammonia concentration is correlated to deposition of polycrystalline films. An optimum HVPE growth process requires selection of reactor geometry and operating conditions to minimize parasitic reactions and wall deposition while providing a uniform reactant distribution across the substrate.

High-Temperature Annealing Effect of Si in Group-V Ambient Prior to Heteroepitaxy of InAs in Metal–Organic Vapor Phase Epitaxy

2011 ◽  
Vol 50 (4S) ◽  
pp. 04DH07 ◽  
Author(s):  
Momoko Deura ◽  
Yoshiyuki Kondo ◽  
Mitsuru Takenaka ◽  
Shinichi Takagi ◽  
Yukihiro Shimogaki ◽  
...  
Keyword(s):  
High Temperature ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Annealing Effect ◽  
High Temperature Annealing ◽  
Group V ◽  
Organic Vapor ◽  
Metal Organic

Effects of the group V/III ratio and a gan inter-layer on the crystal quality of InN grown by using the hydride vapor-phase epitaxy method

2015 ◽  
Vol 66 (6) ◽  
pp. 994-1000
Author(s):  
Ju-Hyung Ha ◽  
Juan Wang ◽  
Won-Jae Lee ◽  
Young-Jun Choi ◽  
Hae-Yong Lee ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Crystal Quality ◽  
Group V
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