Spectroscopic parameters of the absorption bands related to the local vibrational modes of carbon and oxygen impurities in silicon enriched with 28Si, 29Si, and 30Si isotopes

2005 ◽  
Vol 39 (3) ◽  
pp. 300-307 ◽  
Author(s):  
P. G. Sennikov ◽  
T. V. Kotereva ◽  
A. G. Kurganov ◽  
B. A. Andreev ◽  
H. Niemann ◽  
...  
Keyword(s):  
Vibrational Modes ◽  
Absorption Bands ◽  
Spectroscopic Parameters ◽  
Local Vibrational Modes ◽  
Oxygen Impurities

scholarly journals Local vibrational modes of vacancy-oxygen-related complexes at room temperature

2020 ◽  
Vol 56 (4) ◽  
pp. 480-487
Author(s):  
E. A. Tolkacheva ◽  
V. P. Markevich ◽  
L. I. Murin
Keyword(s):  
Absorption Band ◽  
Room Temperature ◽  
Clear Correlation ◽  
Ir Absorption ◽  
Oxygen Impurity ◽  
Interstitial Oxygen ◽  
Vibrational Modes ◽  
Oxygen Defect ◽  
Absorption Bands ◽  
Local Vibrational Modes

The isotopic content of natural silicon (28Si (92.23 %), 29Si (4.68 %) и 30Si (3.09 %)) affects noticeably the shape of IR absorption bands related to the oxygen impurity atoms. In the present work an attempt is undertaken to determine the positions of local vibrational modes (LVMs), related to quasimolecules 28Si16OS29Si and 28Si16OS30Si (OS – substitutional oxygen atom), for the absorption spectra measured at room temperature. An estimation of the isotopic shifts of corresponding modes is done by fitting the shape of the experimentally measured absorption band related to the vacancy–oxygen center in irradiated Si crystals. The LVM isotope shifts are found to be equal 2,2 ± 0.25 cm–1 for 28Si-16OS29Si and 4,3 ± 0,9 см–1 for 28Si-16OS30Si in relation to the basic band due to 28Si-16OS28Si, and the full width at half maximum of the A-center absorption band (28Si-16OS28Si) is 5,3 ± 0.25 cm–1. By means of infrared absorption spectroscopy a clear correlation between the disappearance of the divacancy (V2) in the temperature range 200–275 ºС and appearance of two absorption bands with their maxima at 825.8 and 839.2 cm–1 in irradiated oxygen-rich Si crystals is found. The band positioned at 825.8 cm–1 is assigned to a divacancy-oxygen defect V2O formed via an interaction of mobile V2 with interstitial oxygen (Oi ) atoms. The 839.2 cm–1 band is much more pronounced in neutron irradiated samples as compared to samples irradiated with electrons. We argue that it is related to a trivacancy–oxygen defect (V3O) formed via an interaction of mobile V3 with Oi atoms.

scholarly journals Оптические свойства и механизм образования вакансионно-кислородных комплексов V-=SUB=-2-=/SUB=-O-=SUB=-2-=/SUB=- и V-=SUB=-3-=/SUB=-O-=SUB=-2-=/SUB=- в облученных кристаллах кремния

2018 ◽  
Vol 52 (9) ◽  
pp. 973
Author(s):  
Е.А. Толкачева ◽  
В.П. Маркевич ◽  
Л.И. Мурин
Keyword(s):  
Infrared Absorption ◽  
Vibrational Modes ◽  
Fourier Spectroscopy ◽  
Absorption Bands ◽  
Fast Electrons ◽  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Local Vibrational Modes ◽  
Oxygen Complexes

AbstractThe processes of the formation and annealing of V_ n O_ m ( n , m ≥ 2) vacancy–oxygen complexes in Czochralski silicon crystals irradiated with fast electrons and reactor neutrons have been studied by infrared absorption Fourier spectroscopy. A number of arguments are presented in favor of identification of absorption bands at 829.3 and 844.2 cm^–1 as being related to local vibrational modes of V_2O_2 and V_3O_2 complexes, respectively.

scholarly journals Influence of isotopic composition of silicon on local vibrational modes of vacancy-oxygen complex

2021 ◽  
pp. 102-110
Author(s):  
Ekaterina A. Tolkacheva ◽  
Vladimir P. Markevich ◽  
Leonid I. Murin
Keyword(s):  
Isotopic Composition ◽  
Room Temperature ◽  
Oxygen Impurity ◽  
Vibrational Modes ◽  
Absorption Bands ◽  
Impurity Atoms ◽  
Oxygen Complex ◽  
Isotopic Shifts ◽  
Oxygen Center ◽  
Local Vibrational Modes

Isotopic composition of natural silicon (28Si (92.23 %), 29Si (4.68 %) and 30Si (3.09 %)) affects noticeably the shape of infrared absorption bands related to the oxygen impurity atoms. The positions of local vibrational modes (LVMs), related to quasimolecules 28Si – 16OS – 29Si and 28Si – 16OS – 30Si (OS – substitutional oxygen atom) have been determined for the absorption spectra measured at Т ≅ 20 K and at room temperature (Т ≅ 300 K). An estimation of the isotopic shifts of corresponding modes in a semi empirical way has been done by the fitting the shape of the experimentally measured absorption band related to the vacancy-oxygen center in irradiated Si crystals. The LVM isotope shifts at Т ≅ 300 K are found to be (2.22 ± 0.25) сm–1 for 28Si – 16OS – 29Si and (4.19 ± 0.80) сm–1 for 28Si – 16OS – 30Si in relation to the most intense band with its maximum at (830.29 ± 0.09) cm–1 due to the vibrations of  28Si – 16OS – 28Si, and the full width at half maximum of the A-center absorption bands is (5.30 ± 0.26) cm–1. At Т ≅ 20 K the corresponding values have been determined as (1.51 ± 0.13); (2.92 ± 0.20); (835.78 ± 0.01) and (2.34 ± 0.03) сm–1. A model for the calculation of isotopic shifts in the considered case has been discussed. From an analysis of the observed isotopic shifts some information about the structure of the vacancy-oxygen complex in silicon at Т ≅ 20 K and at room temperature has been obtained.

High Energy Local Vibrational Modes of Carbon Aggregates in SiC: Experimental and Theoretical Insight

2006 ◽  
Vol 527-529 ◽  
pp. 465-468 ◽  
Author(s):  
Alexander Mattausch ◽  
M. Bockstedte ◽  
Oleg Pankratov ◽  
John W. Steeds ◽  
S.A. Furkert ◽  
...  
Keyword(s):  
Ab Initio Calculations ◽  
Ab Initio ◽  
High Energy ◽  
Vibrational Modes ◽  
Energy Mode ◽  
Local Vibrational Modes ◽  
Theoretical Insight

We observe new photoluminescence centers in electron-irradiated 6H-SiC with phonon replicas up to 250 meV and clear threefold isotope splitting of the highest energy mode. Based on ab initio calculations, we discuss the tri-carbon anti-site (C3)Si and the di-interstitial (C2)Hex as models for these centers.

Local vibrational modes of H complexes in Mg-doped GaN grown by molecular beam epitaxy

2004 ◽  
Vol 84 (6) ◽  
pp. 897-899 ◽  
Author(s):  
R. Cuscó ◽  
L. Artús ◽  
D. Pastor ◽  
F. B. Naranjo ◽  
E. Calleja
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Vibrational Modes ◽  
Local Vibrational Modes ◽  
Mg Doped

Local vibrational modes of the Mg–H acceptor complex in GaN

1996 ◽  
Vol 69 (24) ◽  
pp. 3725-3727 ◽  
Author(s):  
W. Götz ◽  
N. M. Johnson ◽  
D. P. Bour ◽  
M. D. McCluskey ◽  
E. E. Haller
Keyword(s):  
Vibrational Modes ◽  
Acceptor Complex ◽  
Local Vibrational Modes

scholarly journals Raman and infrared studies ofLa1−ySryMn1−xMxO3(M=Cr, Co, Cu, Zn, Sc or Ga): Oxygen disorder and local vibrational modes

2006 ◽  
Vol 73 (22) ◽  
Author(s):  
A. Dubroka ◽  
J. Humlíček ◽  
M. V. Abrashev ◽  
Z. V. Popović ◽  
F. Sapiña ◽  
...  
Keyword(s):  
Vibrational Modes ◽  
Infrared Studies ◽  
Local Vibrational Modes

Local vibrational modes of the CuO4-cluster in ZnO

1996 ◽  
Vol 159 (1-4) ◽  
pp. 889-892 ◽  
Author(s):  
I. Broser ◽  
G. Kaczmarczyk ◽  
P. Thurian ◽  
R. Heitz ◽  
A. Hoffmann
Keyword(s):  
Vibrational Modes ◽  
Local Vibrational Modes
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