Local vibrational modes of H complexes in Mg-doped GaN grown by molecular beam epitaxy

We present results of Raman-scattering experiments on GaN doped with Si, C, and Mg, respectively, grown by molecular beam epitaxy (MBE). The influence of the different dopants on strain and free-carrier concentration was investigated. Furthermore, we report on several local vibrational modes (LVM) around 2200 cm−1 in Raman spectra of highly Mg-doped GaN. A possible explanation of these high-energy modes in terms of hydrogen-related vibrations is given. We also found a variety of new structures in the range of the GaN host lattice phonons. Secondary ion mass spectroscopy (SIMS) was applied to determine the concentration of magnesium and unintentionally incorporated hydrogen.

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Local vibrational modes in Mg-doped GaN grown by molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.123320 ◽

1999 ◽

Vol 74 (22) ◽

pp. 3281-3283 ◽

Cited By ~ 84

Author(s):

A. Kaschner ◽

H. Siegle ◽

G. Kaczmarczyk ◽

M. Straßburg ◽

A. Hoffmann ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Vibrational Modes ◽

Local Vibrational Modes ◽

Mg Doped

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Influence of Doping on the Lattice Dynamics of Gallium Nitride

MRS Proceedings ◽

10.1557/proc-537-g3.57 ◽

1998 ◽

Vol 537 ◽

Cited By ~ 6

Author(s):

A. Kaschner ◽

H. Siegle ◽

A. Hoffmann ◽

C. Thomsen ◽

U. Birkle ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Lattice Dynamics ◽

Molecular Beam ◽

High Energy ◽

Host Lattice ◽

Free Carrier ◽

Vibrational Modes ◽

Local Vibrational Modes ◽

Secondary Ion ◽

Mg Doped

AbstractWe present results of Raman-scattering experiments on GaN doped with Si, C, and Mg, respectively, grown by molecular beam epitaxy (MBE). The influence of the different dopants on strain and free-carrier concentration was investigated. Furthermore, we report on several local vibrational modes (LVM) around 2200 cm-1 in Raman spectra of highly Mg-doped GaN. A possible explanation of these high-energy modes in terms of hydrogen-related vibrations is given. We also found a variety of new structures in the range of the GaN host lattice phonons. Secondary ion mass spectroscopy (SIMS) was applied to determine the concentration of magnesium and unintentionally incorporated hydrogen.

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Raman studies of lattice and local vibrational modes of GaInNAs prepared by molecular beam epitaxy

Journal of Physics and Chemistry of Solids ◽

10.1016/j.jpcs.2005.09.061 ◽

2005 ◽

Vol 66 (11) ◽

pp. 2119-2122 ◽

Cited By ~ 5

Author(s):

Sho Shirakata ◽

Masahiko Kondow ◽

Takeshi Kitatani

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Vibrational Modes ◽

Local Vibrational Modes

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Hydrogen-related local vibrational modes in GaN:Mg grown by molecular beam epitaxy

MRS Proceedings ◽

10.1557/proc-798-y5.15 ◽

2003 ◽

Vol 798 ◽

Author(s):

D. Pastor ◽

R. Cuscó ◽

L. Artus ◽

F. Naranjo ◽

E. Calleja

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Chemical Vapor ◽

Organic Chemical ◽

Vibrational Modes ◽

High Concentration ◽

Local Modes ◽

Metal Organic ◽

Scattering Study ◽

Local Vibrational Modes

ABSTRACTWe report a Raman scattering study of local vibrational modes (LVMs) on Mg-doped GaN grown by molecular beam epitaxy (MBE). Besides Mg:Ga local vibrational modes clearly observed at 262 and 565 cm−1, several peaks were detected in the spectral regions around 2200 cm−1 and 2900 cm−1. The modes in the 2200 cm−1 spectral region correspond to local modes of hydrogen complexes and hydrogen-decorated defects, and indicate the presence of a fairly high concentration of H in the samples. The peaks observed in the 2900 cm−1 region are assigned to carbon-hydrogen local modes and are indicative of the presence of C impurities in the samples. These measurements show that both C and H impurities may be present in sizable amounts not only in metal-organic chemical vapor deposition (MOCVD) samples but also in MBE grown samples, and this may have an effect on the electrical conductivity ofp-type GaN:Mg samples.

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